Manufacturing method of light emitting device

ABSTRACT

A manufacturing method of a light emitting device includes preparing a wafer that is provided by arranging a plurality of semiconductor light emitting elements including semiconductor stacks and electrodes provided on first surfaces of the semiconductor stacks. A metal wire is wired in an arc shape between the electrodes of the plurality of semiconductor light emitting elements that are arranged in one direction on the wafer so as to connect each of the electrodes and the metal wire. A resin layer is provided on a side of the first surfaces of the semiconductor stacks in such a way that the metal wire is accommodated inside the resin layer. The wafer is cut along a boundary line to segment the plurality of semiconductor light emitting elements so as to singulate the plurality of semiconductor light emitting elements.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a divisional application of the U.S. patentapplication Ser. No. 14/683,164 filed Apr. 10, 2015, which claimspriority under 35 U.S.C. §119 to Japanese Patent Application No.2014-081158, filed Apr. 10, 2014. The contents of this application areincorporated herein by reference in their entirety.

BACKGROUND OF THE INVENTION (1) Field of the Invention

The present invention relates to a manufacturing method of a lightemitting device.

(2) Description of the Related Art

A light emitting device that employs a semiconductor light emittingelement (light emitting element) such as a light emitting diode iswidely used because it can easily be miniaturized and also due to itshigh luminous efficiency. A light emitting device that employs a lightemitting element may be roughly divided into two types, namely, aface-up type according to which the surface of the light emittingelement where a pad electrode is to be provided is on the opposite sidefrom the mounting substrate, and a face-down type according to which anelectrode is provided on the lower surface of the light emitting elementwhich is a surface facing the mounting substrate.

According to the face-up type, the light emitting element is mounted ona lead or the like, and the light emitting element and the lead areconnected by a bonding wire or the like. Accordingly, when mounted onthe mounting substrate and viewed in a plan view in a directionperpendicular to the surface of the substrate, a part of the bondingwire has to be positioned on the outside than the light emittingelement, and thus there may be a limit on miniaturization.

On the other hand, with the face-down type (flip-chip type), a padelectrode provided on a surface of the light emitting element and wiringprovided on the mounting substrate may be electrically connected by aconnection part such as a bump or a metal pillar positioned within therange of the size of the light emitting element when viewed in plan viewin a direction perpendicular to the surface of the mounting substrate.Therefore, a CSP (Chip Size Package or Chip Scale Package) may berealized where the size of the light emitting device (especially thesize in plan view when viewed in a direction perpendicular to themounting substrate) is miniaturized to a size close to that of the chipof the light emitting element.

Furthermore, in recent years, for further miniaturization or furtherincreased luminous efficiency, a face-down light emitting device fromwhich a growth substrate (light-transmissive substrate) of sapphire orthe like is removed or the thickness thereof is reduced is used.

A growth substrate is a substrate used for growing thereon an n-typesemiconductor layer and a p-type semiconductor layer for forming a lightemitting element, and has an effect of increasing the strength of alight emitting device by supporting the light emitting element that isthin and has low strength. Accordingly, with a light emitting devicewhose growth substrate is removed or whose growth substrate is reducedin thickness after a light emitting element is formed, a resin layer isprovided on the electrode side (side facing a mounting substrate) tosupport the light emitting element, and also a metal pillar penetratingthe resin layer is formed, and the electrode of the light emittingelement and wiring (wiring layer) provided to the mounting substrate areelectrically connected by this metal pillar, as indicated in JapaneseUnexamined Patent Application Publication No. 2010-141176 (hereinafterreferred to as Patent Document 1), for example. With the resin layerincluding this metal pillar, the light emitting device may securesufficient strength.

On the other hand, for example, Japanese Unexamined Patent ApplicationPublication No. 5-299530 (hereinafter referred to as Patent Document 2)and Japanese Unexamined Patent Application Publication No. 2008-251794(hereinafter referred to as Patent Document 3) disclose, although notwith respect to a light emitting element, methods of connecting, by ametal wire, wiring on a mounting substrate and a terminal provided onthe surface of a resin for external connection.

SUMMARY OF THE INVENTION

According to one aspect of the present invention, a manufacturing methodof a light emitting device includes preparing a wafer that is providedby arranging a plurality of semiconductor light emitting elementsincluding semiconductor stacks and electrodes provided on first surfacesof the semiconductor stacks. A metal wire is wired in an arc shapebetween the electrodes of the plurality of semiconductor light emittingelements that are arranged in one direction on the wafer so as toconnect each of the electrodes and the metal wire. A resin layer isprovided on a side of the first surfaces of the semiconductor stacks insuch a way that the metal wire is accommodated inside the resin layer.The wafer is cut along a boundary line to segment the plurality ofsemiconductor light emitting elements so as to singulate the pluralityof semiconductor light emitting elements.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete appreciation of the invention and many of the attendantadvantages thereof will be readily obtained as the same becomes betterunderstood by reference to the following detailed description whenconsidered in connection with the accompanying drawings, wherein:

FIG. 1 is a schematic perspective view showing a structure of a lightemitting device according to a first embodiment of the presentinvention;

FIGS. 2A and 2B are schematic views showing the structure of the lightemitting device according to the first embodiment of the presentinvention, in which FIG. 2A is a plan view, and FIG. 2B is across-sectional view along line A-A in FIG. 2A;

FIGS. 3A and 3B are schematic views showing the structure of the lightemitting device according to the first embodiment of the presentinvention, in which FIG. 3A is a cross-sectional view along line B-B inFIG. 2A, and FIG. 3B is a cross-sectional view along line C-C in FIG.2A;

FIGS. 4A and 4B are schematic views showing an example of the structureof the light emitting element according to the first embodiment of thepresent invention, in which FIG. 4A is a plan view, and FIG. 4B is across-sectional view along line A-A in FIG. 4A;

FIGS. 5A and 5B are schematic views showing an example of the structureof the light emitting element according to the first embodiment of thepresent invention, in which FIG. 5A is a cross-sectional view along lineB-B in FIG. 4A, and FIG. 5B is a cross-sectional view along line C-C inFIG. 4A;

FIGS. 6A to 6D are schematic cross-sectional views showing side-viewmounting of light emitting devices according to the embodiment of thepresent invention and reference examples, in which FIG. 6A shows thelight emitting device according to the embodiment of the presentinvention, and FIGS. 6B to 6D show the light emitting devices accordingto the reference examples;

FIG. 7 is a flow chart showing a manufacturing method of the lightemitting device according to the first embodiment of the presentinvention;

FIGS. 8A to 8D are schematic views showing a light emitting elementpreparation step in manufacturing steps for the light emitting deviceaccording to the first embodiment of the present invention, in whichFIG. 8A is a plan view, FIG. 8B is a cross-sectional view along line A-Ain FIG. 8A, FIG. 8C is a cross-sectional view along line B-B in FIG. 8A,and FIG. 8D is a cross-sectional view along line C-C in FIG. 8A;

FIGS. 9A to 9D are schematic views showing a metal layer forming step inthe manufacturing steps for the light emitting device according to thefirst embodiment of the present invention, in which FIG. 9A is a planview, FIG. 9B is a cross-sectional view along line A-A in FIG. 9A, FIG.9C is a cross-sectional view along line B-B in FIG. 9A, and FIG. 9D is across-sectional view along line C-C in FIG. 9A;

FIGS. 10A to 10D are schematic views showing a wire wiring step in themanufacturing steps for the light emitting device according to the firstembodiment of the present invention, in which FIG. 10A is a plan view,FIG. 10B is a cross-sectional view along line A-A in FIG. 10A, FIG. 10Cis a cross-sectional view along line B-B in FIG. 10A, and FIG. 10D is across-sectional view along line C-C in FIG. 10A;

FIG. 11 is a schematic perspective view showing the wire wiring step inthe manufacturing steps for the light emitting device according to thefirst embodiment of the present invention;

FIGS. 12A and 12B are schematic views showing a resin layer forming stepin the manufacturing steps for the light emitting device according tothe first embodiment of the present invention, in which FIG. 12A is across-sectional view of a portion corresponding to line A-A in FIG. 10A,and FIG. 12B is a cross-sectional view of a portion corresponding toline B-B in FIG. 10A;

FIGS. 13A and 13B are schematic views showing a surface machining stepin the manufacturing steps for the light emitting device according tothe first embodiment of the present invention, in which FIG. 13A is across-sectional view of a portion corresponding to line A-A in FIG. 10A,and FIG. 13B is a cross-sectional view of a portion corresponding toline B-B in FIG. 10A;

FIGS. 14A to 14C are schematic views showing a half-dicing step in themanufacturing steps for the light emitting device according to the firstembodiment of the present invention, in which FIG. 14A is a plan view,FIG. 14B is a cross-sectional view along line A-A in FIG. 14A, and FIG.14C is a cross-sectional view along line B-B in FIG. 14A;

FIGS. 15A and 15B are schematic views showing an external connectionelectrode forming step in the manufacturing steps for the light emittingdevice according to the first embodiment of the present invention, inwhich FIG. 15A is a cross-sectional view of a portion corresponding toline A-A in FIG. 14A, and FIG. 15B is a cross-sectional view of aportion corresponding to line B-B in FIG. 14A;

FIG. 16 is a schematic view showing a growth substrate removal step inthe manufacturing steps for the light emitting device according to thefirst embodiment of the present invention, and is a cross-sectional viewof a portion corresponding to line A-A in FIG. 14A;

FIG. 17 is a schematic view showing a phosphor layer forming step in themanufacturing steps for the light emitting device according to the firstembodiment of the present invention, and is a cross-sectional view of aportion corresponding to line A-A in FIG. 14A;

FIGS. 18A and 18B are schematic views showing a singulation process inthe manufacturing steps for the light emitting device according to thefirst embodiment of the present invention, in which FIG. 18A is across-sectional view of a portion corresponding to line A-A in FIG. 14A,and FIG. 18B is a cross-sectional view of a portion corresponding toline B-B in FIG. 14A;

FIG. 19 is a schematic perspective view showing a structure of a lightemitting device according to a second embodiment of the presentinvention;

FIGS. 20A and 20B are schematic views showing the structure of the lightemitting device according to the second embodiment of the presentinvention, in which FIG. 20A is a cross-sectional view along line A-A inFIG. 19, and FIG. 20B is a cross-sectional view along line B-B in FIG.19;

FIG. 21 is a schematic perspective view showing a structure of a lightemitting device according to a third embodiment of the presentinvention;

FIGS. 22A and 22B are schematic views showing the structure of the lightemitting device according to the third embodiment of the presentinvention, in which FIG. 22A is a cross-sectional view along line A-A inFIG. 21, and FIG. 22B is a cross-sectional view along line B-B in FIG.21;

FIG. 23 is a schematic perspective view showing a structure of a lightemitting device according to a fourth embodiment of the presentinvention;

FIGS. 24A and 24B are schematic views showing the structure of the lightemitting device according to the fourth embodiment of the presentinvention, in which FIG. 24A is a cross-sectional view along line A-A inFIG. 23, and FIG. 24B is a cross-sectional view along line B-B in FIG.23;

FIG. 25 is a schematic perspective view showing a structure of a lightemitting device according to a fifth embodiment of the presentinvention;

FIGS. 26A and 26B are schematic views showing the structure of the lightemitting device according to the fifth embodiment of the presentinvention, in which FIG. 26A is a cross-sectional view along line A-A inFIG. 25, and FIG. 26B is a cross-sectional view along line B-B in FIG.25;

FIG. 27 is a schematic perspective view showing a structure of a lightemitting device according to a sixth embodiment of the presentinvention;

FIGS. 28A and 28B are schematic views showing the structure of the lightemitting device according to the sixth embodiment of the presentinvention, in which FIG. 28A is a cross-sectional view along line A-A inFIG. 27, and FIG. 28B is a cross-sectional view along line B-B in FIG.27;

FIG. 29 is a schematic perspective view showing a structure of a lightemitting device according to a seventh embodiment of the presentinvention; and

FIGS. 30A and 30B are schematic views showing the structure of the lightemitting device according to the seventh embodiment of the presentinvention, in which FIG. 30A is a cross-sectional view along line A-A inFIG. 29, and FIG. 30B is a cross-sectional view along line B-B in FIG.29.

DESCRIPTION OF THE EMBODIMENTS

The embodiments will now be described with reference to the accompanyingdrawings, wherein like reference numerals designate corresponding oridentical elements throughout the various drawings.

Hereinafter, embodiments of a light emitting device according to thepresent disclosure and a manufacturing method thereof will be described.The drawings referred to in the description below schematically show thepresent disclosure, and the scales, the gap, the positional relationshipand the like of the members may be exaggerated, or some of the membersmay be omitted. Also, the scales and the gap of the members may notcoincide among the perspective view, the plan view and thecross-sectional view. Also, in the following description, the same nameand the same reference sign basically refer to the same member or amember of the same material, and detailed description is omitted asappropriate.

Also, “above”, “below”, “left”, “right” and the like of the lightemitting device according to each embodiment of the present inventionmay change depending on the situation. In the present specification,“above”, “below” and the like indicate the relative positions of thestructural elements in the drawings referred to in the description, andare not intended to indicate the absolute positions unless particularlystated.

First Embodiment Structure of Light Emitting Device

First, a structure of a light emitting device according to a firstembodiment will be described with reference to FIG. 1 to FIG. 3B. Asshown in FIG. 1 to FIG. 3B, a light emitting device 100 according to thefirst embodiment is a CSP which has a substantially cuboid outer shape,and which includes a semiconductor light emitting element 1 (hereinafterreferred to a “light emitting element” as appropriate) having an LED(light emitting diode) structure from which a growth substrate isremoved, a supporting member 3 provided on one surface side of the lightemitting element 1, and a phosphor layer (wavelength conversion layer) 2provided on the other surface side of the light emitting element 1. Ann-side electrode 13 and a p-side electrode 15 are provided to onesurface side of the light emitting element 1, and are electricallyconnected, via a metal layer (n-side metal layer) 33 n and a metal layer(p-side metal layer) 33 p and a metal wire (n-side metal wire) 32 n anda metal wire (p-side metal wire) 32 p, which are internal wiringprovided inside a resin layer 31, which is a main material of thesupporting member 3, to an external connection electrode (n-sideexternal connection electrode) 34 n and an external connection electrode(p-side external connection electrode) 34 p, respectively, provided tocover the side surfaces and the upper surface of the resin layer 31.

Additionally, to show the internal structure in an easily understandablemanner, the perspective view shown in FIG. 1 shows a see-through view ofthe resin layer 31 with the outer form of the resin layer 31 indicatedby a double-dashed line. Also, in FIG. 1, description of a step portion31 g (see FIG. 2B, and FIGS. 3A and 3B) described later with respect toa lower portion (−Z axis direction) of the resin layer 31 is omitted.Also, the same thing may be said with respect to the perspective viewsof light emitting devices according to second to seventh embodimentsshown in FIGS. 19A to 29A as with the perspective view shown in FIG. 1.

The light emitting device 100 is structured in such a way as to allowside-view mounting with one of the side surfaces in the longitudinaldirection (a side surface parallel to the XZ plane) along which theexternal connection electrodes 34 n and 34 p are provided as themounting surface, and to allow top-view mounting with the upper surface(a side surface parallel to the XY plane) as the mounting surface. Also,as shown in FIG. 2B, and FIGS. 3A and 3B, the step portion 31 g isprovided on a side surface in the lateral direction (a side surfaceparallel to the YZ plane) and a side surface in the longitudinaldirection of the light emitting device 100, with a position H_(D) in theheight direction (Z-axis direction) as the boundary. The lower sidesurface below the position H_(D) is formed to be on the inner side, inplan view, than the upper side surface above the position H_(D).Additionally, as will be described later in detail, the light emittingdevice 100 is a WCSP (a CSP by a wafer process) which is fabricated at awafer level.

Also, the light emitting device 100 converts, by a phosphor layer 2, apart or all of light emitted by the light emitting element 1 into lightof a different wavelength, and takes, as output light, the light afterwavelength conversion or the light after wavelength conversion and thelight emitted by the light emitting element 1. For example, with thelight emitting element 1 emitting blue light and the phosphor layer 2absorbing a part of the blue light and performing wavelength conversioninto yellow light, the light emitting device 100 can be a white lightsource that outputs white light which is a mixture of blue light andyellow light. Additionally, in the present embodiment and otherembodiments described later, the light emitting device 100 and the likeinclude the phosphor layer 2, but the phosphor layer 2 is notindispensable in forming the CSP, and may be omitted.

Additionally, for the sake of convenience, in the present specification,as shown by coordinate axes drawn in each drawing as appropriate, thenormal direction of the surface where the n-side electrode 13 and thep-side electrode 15 of the light emitting element 1 are provided istaken as the “+Z-axis direction”, and observation from the +Z-axisdirection to the −Z-axis direction is referred to as “in plan view”.Also, the longitudinal direction of the light emitting element 1 havinga rectangular shape in plan view is referred to as the X-axis direction,and the lateral direction as the Y-axis direction. Moreover, eachdrawing shown as a cross-sectional view shows a cross-section of asurface perpendicular to the XY plane (that is, a plane parallel to theXZ plane or the YZ plane).

Next, the structure of each section of the light emitting device 100will be described one by one in detail. The light emitting element 1 isa face-down LED chip having a substantially rectangular plate shape inplan view, and including the n-side electrode 13 and the p-sideelectrode 15 on one surface side.

Example of Light Emitting Element

Here, with reference to FIGS. 4A and 4B and FIGS. 5A and 5B, an exampleof the light emitting element 1 will be described in detail. The lightemitting element 1 shown in FIGS. 4A and 4B and FIGS. 5A and 5B includesa semiconductor stack 12 where a n-type semiconductor layer 12 n and ap-type semiconductor layer 12 p are stacked. The semiconductor stack 12emits light when a current flows between the n-side electrode 13 and thep-side electrode 15, and an active layer 12 a is preferably providedbetween the n-type semiconductor layer 12 n and the p-type semiconductorlayer 12 p.

An area where the p-type semiconductor layer 12 p and the active layer12 a are partially absent, that is, an area that is recessed from thesurface of the p-type semiconductor layer 12 p (this area is referred toas a “step portion 12 b”) is formed to the semiconductor stack 12. Thebottom surface of the step portion 12 b is the exposed surface of then-type semiconductor layer 12 n, and the n-type semiconductor layer 12 nand the n-side electrode 13 are electrically connected at a connectingportion 13 a, which is an opening of a protective layer 16 provided at apart of the bottom surface of the step portion 12 b. Also, afull-surface electrode 14, which is a reflective electrode 14 a and acover electrode 14 b stacked together, is provided on substantially thewhole of the upper surface of the p-type semiconductor layer 12 p of thesemiconductor stack 12. Furthermore, the surfaces of the semiconductorstack 12 and the full-surface electrode 14 are covered by the insulatingprotective layer 16 except for the whole of the lower surface of thesemiconductor stack 12, the connecting portion 13 a, which is a part ofthe bottom surface of the step portion 12 b, and a part of the uppersurface of the full-surface electrode 14 where the p-side electrode 15is provided. Also, the light emitting element 1 has a protrusion-recessshape 12 c for increasing the light extraction efficiency formed on theentire surface of the lower surface of the n-type semiconductor layer 12n. Such a protrusion-recess shape 12 c can be formed, in themanufacturing steps for the light emitting device 100 described later,by performing etching after a growth substrate (for example, a sapphiresubstrate) for crystal growth of the semiconductor stack 12 is removed.

Moreover, the light emitting element 1 has the p-side electrode 15,which is a pad electrode on the p-side, formed on a part of the uppersurface of the full-surface electrode 14, and has the n-side electrode13, which is a pad electrode on the n-side, formed extending oversubstantially all of the upper surface and the side surfaces of thesemiconductor stack 12 except for the area where the p-side electrode 15is provided and its periphery, with the insulating protective layer 16provided below the n-side electrode 13. That is, the light emittingelement 1 has the n-side electrode 13 and the p-side electrode 15 formedon one surface side of the semiconductor stack 12. Also, by providingthe n-side electrode 13 or the p-side electrode 15 over a wide area ofthe upper surface and the side surfaces of the light emitting element 1in this manner, the heat dissipation property may be improved byefficiently conducting heat to the resin layer 31 of the supportingmember 3 described later.

A semiconductor made of, for example, In_(X)Al_(Y)Ga_(1-X-Y)N (0≦X, 0≦Y,X+Y<1) is suitably used for the semiconductor stack 12 (the n-typesemiconductor layer 12 n, the active layer 12 a, and the p-typesemiconductor layer 12 p). Also, each of the semiconductor layers mayhave a single layer structure, or a stacked structure having layers withdifferent compositions, film thicknesses or the like, a superlatticestructure, or the like. Particularly, the active layer 12 a preferablyhas a single quantum well or multiple quantum well structure where thinfilms achieving a quantum effect are stacked.

The full-surface electrode 14 has functions of a current diffusion layerand a reflective layer, and is structured with the reflective electrode14 a and the cover electrode 14 b stacked together. The reflectiveelectrode 14 a is provided to cover substantially the entire uppersurface of the p-type semiconductor layer 12 p. Also, the coverelectrode 14 b is provided to cover all of the upper surface and theside surfaces of the reflective electrode 14 a. The reflective electrode14 a is a conductor layer for uniformly diffusing, over the entiresurface of the p-type semiconductor layer 12 p, the current supplied viathe cover electrode 14 b and the p-side electrode 15 provided to a partof the upper surface of the cover electrode 14 b. Moreover, thereflective electrode 14 a has good light reflectivity, and functions asa reflective film for reflecting light emitted by the light emittingelement 1 toward the light extraction surface.

As the reflective electrode 14 a, a metal material having goodconductivity and reflectivity can be used. As a metal material havinggood reflectivity particularly in a visible light region, Ag, Al or anyof alloys having these metals as the principal components may besuitably used. Furthermore, as the reflective electrode 14 a, thesemetal materials can be used as a single layer or as a multilayerstructure.

Furthermore, the cover electrode 14 b is a barrier layer for preventingmigration of a metal material forming the reflective electrode 14 a. Asthe cover electrode 14 b, a metal material having good conductivity andbarrier properties can be used, and for example, Al, Ti, W, Au, an AlCualloy or the like may be used. Also, as the cover electrode 14 b, thesemetal materials can be used as a single layer or as a multilayerstructure.

The n-side electrode 13 is electrically connected to the n-typesemiconductor layer 12 n at the opening of the protective layer 16 atthe bottom surface of the step portion 12 b. As shown by hatching inFIG. 4A, the connecting portion 13 a between the n-type semiconductorlayer 12 n and the n-side electrode 13 is provided along the entireouter peripheral portion of the semiconductor stack 12. By providing theconnecting portion 13 a over a wide area in this manner, the currentthat is supplied via the n-side electrode 13 can be uniformly diffusedon the n-type semiconductor layer 12 n, and the luminous efficiency maybe increased. Also, the p-side electrode 15 is provided to a part of theupper surface of the cover electrode 14 b. As shown in FIGS. 2A and 2Band FIGS. 3A and 3B, a metal wire 32 n and a metal wire 32 p, which areinternal wiring of the supporting member 3, are connected to the n-sideelectrode 13 and the p-side electrode 15 via the metal layer 33 n andthe metal layer 33 p, respectively.

As the n-side electrode 13 and the p-side electrode 15, a metal materialcan be used, and for example, a single metal such as Ag, Al, Ni, Rh, Au,Cu, Ti, Pt, Pd, Mo, Cr, or W, or any of alloys having these metals asthe principal components can be suitably used. Additionally, in the caseof using an alloy, an alloy containing a non-metal element such as Si asa compositional element, such as an AlSiCu alloy, may also be used.Also, as the n-side electrode 13 and the p-side electrode 15, thesemetal materials can be used as a single layer or as a stacked multilayerstructure.

The protective layer 16 is a coating film that has an insulatingproperty and that covers the upper surface and the side surfaces of thesemiconductor stack 12 and the full-surface electrode 14 other than theareas where the connecting portion 13 a between the n-type semiconductorlayer 12 n and the n-side electrode 13, and the p-side electrode 15 areprovided. The protective layer 16 functions as a protective film and aninsulating film of the light emitting element 1. Also, the n-sideelectrode 13 is provided extending over a wide area on the upper surfaceof the protective layer 16. As the protective layer 16, a metal oxide ora metal nitride may be used, and for example, an oxide or a nitride ofat least one type selected from the group consisting of Si, Ti, Zr, Nb,Ta and Al can be suitably used. Moreover, as the protective layer 16,light-transmissive dielectric materials of two or more types withdifferent refractive indices may be stacked and a DBR (Distributed BraggReflector) film may be formed.

Additionally, the light emitting element 1 shown in FIGS. 4A and 4B andFIGS. 5A and 5B is only an example, and is not restrictive. It is enoughif the light emitting element 1 has the n-side electrode 13 and thep-side electrode 15 provided on one surface side of the semiconductorstack 12, and the arrangement areas of the step portion 12 b, the n-sideelectrode 13 and the p-side electrode 15, and the like may be determinedas appropriate.

Returning to FIG. 1 to FIG. 3B, the structure of the light emittingdevice 100 will be further described. The phosphor layer (wavelengthconversion layer) 2 is a wavelength conversion layer that absorbs a partor all of the light emitted by the light emitting element 1 and thatconverts the light into light of a wavelength different from thewavelength emitted by the light emitting element 1. The phosphor layer 2may be formed as a resin layer containing particles of phosphor as awavelength conversion material. Furthermore, the phosphor layer 2 isprovided on the lower surface side of the n-type semiconductor layer 12n, which is provided with the protrusion-recess shape 12 c (see FIG. 4B)and which is the light extraction surface of the light emitting element1.

The film thickness of the phosphor layer 2 may be determined accordingto the amount of phosphor contained, the color desired to be obtainedafter mixing the color of light emitted by the light emitting element 1and the color of light after wavelength conversion, or the like, and forexample, it is 1 μm or more and 500 μm or less, and more preferably, 5μm or more and 200 μm or less, and even more preferably, 10 μm or moreand 100 μm or less.

As a resin material for forming the phosphor layer 2, one that is knownin the field may be used, and preferably, one that has goodlight-transmissiveness with respect to light emitted by the lightemitting element 1 and light after wavelength conversion by the phosphorcontained in the phosphor layer 2 is used.

Also, the phosphor (wavelength conversion material) is not particularlylimited as long as it is a fluorescent substance that is excited bylight of a wavelength emitted by the light emitting element 1 and thatemits fluorescence of a wavelength different from the excitation light,and two or more types may be uniformly mixed in the phosphor layer 2, ormay be distributed in a multilayer structure.

The phosphor layer 2 may be formed by adjusting a slurry containing theresin mentioned above, the phosphor particles, and other inorganicfiller particles in a solvent, applying the adjusted slurry to the lowersurface of the semiconductor stack 12 by using a coating method such asa spraying method, a casting method or a potting method, and curing thesame. Moreover, the phosphor layer 2 may be formed by separatelyfabricating a resin plate containing phosphor particles and adhering theresin plate to the lower surface of the semiconductor stack 12.

Alternatively, light emitted by the light emitting element 1 may bedirectly output with the lower surface of the semiconductor stack 12 asthe light extraction surface, without providing the phosphor layer 2 inthe light emitting device 100. Also, instead of the phosphor layer 2, alight-transmissive resin layer not containing phosphor may be provided,or a light diffusion resin layer containing a light diffusive filler maybe provided.

The supporting member 3 is a reinforcing member that has a cuboid shapeaccommodating the outer shape of the light emitting element 1 in planview, and that is bonded with the surface of the light emitting element1 where the n-side electrode 13 and the p-side electrode 15 are providedso as to maintain the strength of the structure of the light emittingelement 1 from which the growth substrate 11 (see FIGS. 8A to 8D) isremoved. Also, the supporting member 3 has substantially the same outershape as the phosphor layer 2 in plan view. The supporting member 3includes the resin layer 31, the external connection electrodes 34 n and34 p to be mounted on a mounting substrate, and internal wiring (themetal wires 32 n and 32 p, and the metal layers 33 n and 33 p) forelectrically connecting the n electrode 13 and the p electrode 15 withthe external connection electrodes 34 n and 34 p of correspondingpolarities, respectively.

The resin layer 31 is a main body as a reinforcing member of the lightemitting element 1. Also, as shown in FIG. 2B and FIGS. 3A and 3B, theresin layer 31 has substantially the same outer shape as the supportingmember 3, and in plan view, accommodates the outer shape of the lightemitting element 1 and has substantially the same outer shape as thephosphor layer 2. Moreover, the resin layer 31 is a sealing resin layerfor sealing the upper surface and the side surfaces of the lightemitting element 1. Accordingly, the light emitting element 1 has itsentire surface sealed by the resin layer 31 and the phosphor layer 2,which is a resin layer provided on the lower surface side. Also, thestep portion 31 g is provided on the side surfaces in the longitudinaldirection and the side surfaces in the lateral direction of the resinlayer 31, with the position H_(D) in the height direction as theboundary, and in plan view, the portion lower than the position H_(D) isformed to be on the inner side than the portion higher than the positionH_(D).

The resin layer 31 includes inside, as the internal wiring, the metalwires 32 n and 32 p, and the metal layers 33 n and 33 p. The sidesurfaces of the metal layers 33 n and 33 p, which are the internalwiring on the lower layer side, are sealed by the resin layer 31 so asnot to be exposed from the resin layer 31. Also, the metal wires 32 nand 32 p, which are the internal wiring on the upper layer side, areprovided in such a way as to be exposed at the side surfaces in thelongitudinal direction, the side surfaces in the lateral direction andthe upper surface of the resin layer 31. Also, the exposed surfaces ofthe metal wires 32 n and 32 p are formed to be flat so as to form thesame plane as the side surfaces or the upper surface of the resin layer31 where they are exposed.

Additionally, the exposed surfaces of the metal wires 32 n and 32 p fromthe resin layer 31 are covered by the external connection electrodes 34n and 34 p. For this reason, the surfaces of the external connectionelectrodes 34 n and 34 p are formed to be higher than the correspondingside surface or upper surface of the resin layer 31 by the amount of thefilm thickness.

As the resin material of the resin layer 31, a resin material similar tothat used for the phosphor layer 2 described above can be used. Also, inthe case of forming the resin layer 31 by compression molding, an EMC(epoxy mold compound), which is a powder epoxy resin, an SMC (siliconemold compound), which is a powder silicone resin, or the like can besuitably used as a raw material, for example.

Furthermore, to increase the heat conductivity, a heat conductive membermay be included in the resin layer 31. By increasing the heatconductivity of the resin layer 31, heat generated by the light emittingelement 1 can be swiftly conducted and dissipated to the outside. As theheat conductive member, a powder carbon black, AlN (aluminum nitride) orthe like can be used, for example. Additionally, in the case where theheat conductive member is a material having conductivity, the heatconductive member is included at a particle density within such a rangethat the resin layer 31 would not have conductivity.

Furthermore, as the resin layer 31, a white resin obtained by mixing alight reflective filler in a light-transmissive resin material may beused. In the case where the white resin is used at least on the lowerlayer section of the resin layer 31 that is bonded with the uppersurface of the light emitting element 1 to cause the resin layer 31 onthe side adjacent to the light emitting element 1 to function as a lightreflective film, light leaked from the upper surface and the sidesurfaces of the light emitting element 1 may be returned to inside thelight emitting element 1, and thus, the efficiency of light extractionfrom the lower surface side of the light emitting element 1, which is alight extraction surface, may be increased. Also, in the case where theresin layer 31 has the function as a light reflective film, thefull-surface electrode 14 of the light emitting element 1 may be formedby using a light-transmissive conductive material such as ITO (indiumtin oxide), IZO (indium zinc oxide) or the like.

With respect to the thickness of the resin layer 31, a lower limit maybe set so that enough strength may be achieved as the reinforcing memberfor the light emitting element 1 from which the growth substrate isstripped off. Furthermore, in the case of enabling side-view mounting,the lower limit is preferably determined taking into account thedistances between the external connection electrodes 34 n and 34 p andthe phosphor layer 2 so that an adhesive material such as solder doesnot extend to the phosphor layer 2 from an-side electrode connectingportion.

For example, from the standpoint of being a reinforcing member, thethickness of the resin layer 31 is preferably about 30 μm or more.Further preferably, the thickness of the resin layer 31 is about 100 μmor more and 300 μm or less so as to enable stable mounting of the lightemitting device 100 at the time of mounting on a mounting substrate in aside-view manner with the side surface portion of the resin layer 31 asthe mounting surface. Furthermore, from the standpoint of preventingspreading of an adhesive material to the phosphor layer 2, the phosphorlayer 2 is preferably separated from the external connection electrodes34 n and 34 p by about 30 μm or more, and more preferably, the distanceis about 80 μm or more. Additionally, in the present embodiment, themetal wires 32 n and 32 p are connected with the external connectionelectrodes 34 n and 34 p on the side surface portions of the resin layer31, and thus, the upper limit of the thickness of the resin layer 31 isnot particularly specified.

The metal wire (n-side metal wire) 32 n is provided on the inside theresin layer 31, and together with the metal layer 33 n, forms internalwiring for electrically connecting the n-side electrode 13 and theexternal connection electrode 34 n. A part of the lower surface (firstsurface) of the metal wire 32 n is bonded with the upper surface (secondsurface opposite to the first surface) of the metal layer 33 n providedon top of the n-side electrode 13, and the entire upper surface and apart of the side surface of the metal wire 32 n are bonded with theexternal connection electrode 34 n. Moreover, the metal wire 32 nfunctions also as a heat transfer route for dissipating heat generatedby the light emitting element 1.

The metal wire 32 n is bonded with the upper surface of the metal layer33 n through the lower surface (first surface), that is, the sidesurface of the wire shape, and thus, the metal wire 32 n and the metallayer 33 n may be bonded in a wider area compared to a case of bondingthrough an end surface of the metal wire 32 n. Moreover, by causing theside surface of the wire shape to be bonded with the upper surface ofthe metal layer 33 n and across the full width of the lateral direction(Y-axis direction) of the metal layer 33 n when providing the metal wire32 n in such a way as to penetrate the resin layer 31 in the lateraldirection, the bonded area of the metal wire 32 n and the metal layer 33n may be further increased. By bonding the metal wire 32 n and the metallayer 33 n across a wider area, the heat conductivity from the metallayer 33 n to the metal wire 32 n may be increased, and as a result, theheat dissipation property of the light emitting device 100 may beimproved. Additionally, the same thing may be applied in the case ofbonding the side surface of the wire shape of the metal wire 32 n andthe upper surface of the n-side electrode 13 without providing the metallayer 33 n.

The metal wire 32 n is formed by using a ribbon-shaped wire whosecross-sectional shape (the shape of the transverse plane, of the wireshape, which is a cross-section along the surface that is perpendicularto the extending direction of the wire shape) is a rectangle. In planview, the metal wire 32 n is disposed parallel to the lateral-directionside of the semiconductor stack 12 (along the Y-axis direction).Moreover, a part of the side surface (the lower surface in FIG. 2B andFIGS. 3A and 3B) of the wire shape of the metal wire 32 n is connectedto the upper surface of the metal layer 33 n, and both end surfaces (theside surfaces in FIG. 2B and FIGS. 3A and 3B), which are the transverseplanes of the wire shape, are provided exposed at both side surfaces ofthe resin layer 31 in the longitudinal direction. Furthermore, otherportions corresponding to the side surface of the wire shape of themetal wire 32 n having curved shapes are provided so that a portion ofthe metal wire 32 n is exposed at the side surface in the lateraldirection and at the upper surface of the resin layer 31. Additionally,the upper surface of the metal wire 32 n is processed into a flatsurface by machining.

Also, the metal wire 32 n is disposed while being bent in a wave shapeor in an arc shape with the portion above the metal layer 33 n being thetrough (see FIG. 11 and FIGS. 12A and 12B). In this manner, by bendingand wiring the metal wire 32 n, the volume of metal in the supportingmember 3 (the resin layer 31) can be increased. Also, the metal wire 32n is provided penetrating in the lateral direction of the resin layer31, and the volume of metal in the supporting member 3 can be increased.Furthermore, with both end surfaces of the metal wire 32 n being exposedfrom the resin layer 31 with relatively low heat conductivity, heat canbe easily dissipated to the outside via both end surfaces of the metalwire 32 n. The forming method of the metal wire 32 n will be describedlater in detail.

The metal wire 32 n is exposed from the resin layer 31 at other than theside surface in the lateral direction facing the metal wire 32 p, thatis, at the entire surface of the other side surface in the lateraldirection, portions of both side surfaces in the longitudinal directionhigher than a position H_(B), and the entire upper surface. Theseexposed surfaces where the metal wire 32 n is exposed from the resinlayer 31 are formed to be flat so as to form the same plane as thecorresponding side surface or upper surface of the resin layer 31. Also,these exposed surfaces where the metal wire 32 n is exposed from theresin layer 31 are covered by the external connection electrode 34 n.

As shown in FIGS. 2A and 2B, and FIGS. 3A and 3B, when the height of thebonding surface (the position in the Z-axis direction) of the metal wire32 n and the metal layer 33 n is given as a position H_(C), the metalwire 32 n has its side surfaces in the longitudinal direction, at alower portion from the position H_(C) to the position H_(B), covered bythe resin layer 31, and its side surfaces in the longitudinal direction,at an upper portion from the position H_(B) to a position HA, exposedfrom the resin layer 31.

Also, the side surface of the metal wire 32 n in the lateral directionhas substantially the same shape as the cross-sectional shape shown inFIGS. 3A and 3B, and the entire surface thereof is exposed at the sidesurface of the resin layer 31 in the lateral direction. Accordingly, theouter shape of the exposed surface of the metal wire 32 n in a side viewin the lateral direction is such that a portion corresponding to thewidth of the metal layer 33 n is horizontal with respect to the uppersurface of the electrode (a surface perpendicular to the XY plane) atthe lowermost position H_(C), a portion from the position H_(C) to theposition H_(B), which is at the lowermost end of the exposed surface inthe longitudinal direction, is inclined to be wider from the positionH_(C) toward the position H_(B), a portion from the position H_(B) tothe position HA is vertical with respect to the upper surface of theelectrode at the upper end, and a portion at the position HA ishorizontal with respect to the upper surface of the electrode.

The metal wire (p-side metal wire) 32 p is provided on the inside of theresin layer 31, and together with the metal layer 33 p, forms internalwiring for electrically connecting the p-side electrode 15 and theexternal connection electrode 34 p. A part of the lower surface of themetal wire 32 p is bonded with the upper surface of the metal layer 33 pprovided on top of the p-side electrode 15, and the entire upper surfaceand a part of the side surface of the metal wire 32 p are bonded withthe external connection electrode 34 p. Moreover, the metal wire 32 pfunctions also as a heat transfer route for dissipating heat generatedby the light emitting element 1. The structure of the metal wire 32 p issubstantially the same as that of the metal wire 32 n, and detaileddescription thereof is omitted.

The exposed surfaces of the metal wires 32 n and 32 p from the resinlayer 31 are provided with the external connection electrodes 34 n and34 p, and are made the mounting surface at the time of top-viewmounting. Also, the exposed surfaces of the metal wires 32 n and 32 p atthe side surfaces of the resin layer 31 in the longitudinal directionare provided with the external connection electrodes 34 n and 34 p, andare made the mounting surfaces at the time of side-view mounting.Accordingly, the exposed surfaces of the metal wire 32 n and the exposedsurfaces of the metal wire 32 p are preferably separated by about 200 μmor more on the upper surface and the side surfaces in the longitudinaldirection, for example, so as to prevent short-circuiting due tospreading of an adhesive material at the time of mounting. Additionally,in the present embodiment, the external connection electrodes 34 n and34 p are provided only on the exposed surfaces of the metal wires 32 nand 32 p, but in the case of providing the external connectionelectrodes 34 n and 34 p to extend over the upper surface and the sidesurfaces of the resin layer 31, the external connection electrode 34 nand the external connection electrode 34 p are preferably separated byabout 200 μm or more, for example.

As the metal wires 32 n and 32 p, a material having good electricalconductivity and heat conductivity is preferably used, and Au, Cu, Al,Ag, or any of alloys having these metals as the principal components canbe suitably used. Also, coating may be applied to the surfaces of themetal wires. Furthermore, with respect to efficient conduction of heatgenerated by the light emitting element 1, the greater the volume of themetal wires 32 n and 32 p in the supporting member 3, the morepreferable. To inexpensively configure large-volume metal wires 32 n and32 p, Al, Cu or any of alloys having these metals as the principalcomponents is preferably used. Also, at the time of forming the metalwires 32 n and 32 p, in order to easily bend and dispose large-volumewires, that is, wires having large cross-sectional areas, it ispreferable to use a relatively soft material such as Al, Au or any ofalloys having these metals as the principal components.

The cross-sectional shape of wires used for forming the metal wires 32 nand 32 p is not particularly limited, and it may be an oval, a circle, asquare or the like instead of a rectangle, but wires having arectangular cross-section are preferable since bonding with the uppersurfaces of the metal layers 33 n and 33 p with high adhesiveness andover large areas is enabled. Also, by using a rectangular cross-section,a load is applied uniformly to the metal layers 33 n and 33 p at thetime of wire-bonding, and the impact on the semiconductor stack 12 onthe lower side of the metal layers 33 n and 33 p can be reduced.Accordingly, the damage to the semiconductor stack 12 can be reducedwhen using wires having the same cross-sectional area compared to a caseof using wires having round cross-sections. Moreover, in the case wherethe supporting member 3 has a cuboid shape, if a wire having arectangular cross-section is used, the wire can be disposed by beingbent in such a way as to reduce the gap within the shape of thesupporting member 3. This is preferable because the volumes of the metalwires 32 n and 32 p in the supporting member 3 can thus be increased.

The diameter of wires used for forming the metal wires 32 n and 32 p canbe selected as appropriate according to the size of the supportingmember 3. For example, an Al wire having a rectangular cross-sectionhaving a size of up to about 1000 μm×500 μm can be used. Also, an Agwire having a circular cross-section with a diameter of up to about 100μm, or a Cu wire or an Al wire having a circular cross-section with adiameter of up to about 300 μm can be used.

Specifically, in the case where the cross-sections of the metal wires 32n and 32 p are a rectangle, considering stable mounting of the lightemitting device 100 and heat dissipation to the mounting substrate, thelength of the short side of the rectangle (that is, the thickness of themetal wires 32 n and 32 p) is preferably about 100 m or more, and morepreferably about 150 μm or more, and even more preferably about 200 μmor more. Also, considering the stress (strain) on the light emittingelement 1 when connecting the metal wires 32 n and 32 p, the length(thickness) of the short sides of the cross-sections of the metal wires32 n and 32 p is preferably about 700 μm or less, and more preferably400 μm or less, and even more preferably about 350 μm or less, and stillmore preferably about 250 μm or less.

Also, on the side surface of the resin layer 31 in the longitudinaldirection, the width of the exposed surfaces of the metal wires 32 n and32 p (the distance between the position HA and the position H_(B)) inthe Z-axis direction, which is the height direction (that is, thestacking direction of the semiconductor stack 12), is preferably aboutone-third or more of the width of the resin layer 31 (the distancebetween the position HA and a position HE). Furthermore, each of theareas of the end surfaces of the metal wires 32 n and 32 p exposed atthe side surfaces of the resin layer 31 in the longitudinal direction ispreferably about 10000 μm² or more, and more preferably about 20000 μm²or more. The light emitting device 100 may then be mounted more stably,and the heat dissipation to the mounting substrate may be increased.Additionally, also in the case where the shape of the exposed surfacesof the metal wires 32 n and 32 p on the side surface of the resin layer31 in the longitudinal direction is other than a rectangle, such as acircle, the width in the height direction (for example, in the case of acircle, the diameter of the circle) is preferably one-third or more ofthe width of the resin layer 31 in the height direction, and the samething can be said for the area of the exposed surface as for the case ofa rectangle.

Also, the length (width) of the long sides of the cross-sections of themetal wires 32 n and 32 p may be selected as appropriate according tothe width of the supporting member 3 in the longitudinal direction, butconsidering the mountability of the light emitting device 100, each areais preferably about 50 μm or more, and more preferably about 75 μm ormore. Also, the exposed surface of the metal wire 32 n and the exposedsurface of the metal wire 32 p are preferably separated by about 200 μmor more so that short-circuiting between the exposed surfaces at thetime of mounting may be prevented. Thus, with respect to the upper limitof the total of the width of the metal wire 32 n and the width of themetal wire 32 p, if the width of the supporting member 3 in thelongitudinal direction is about 500 μm, the widths of the metal wires 32n and 32 p may be about 300 μm or less in total, and if the width of thesupporting member 3 in the longitudinal direction is about 2 mm, thewidths of the metal wires 32 n and 32 p may be about 1800 μm or less intotal.

Additionally, as shown in FIGS. 10A to 10D, in a wire wiring step S103(see FIG. 7) described later, in the case of connecting one metal wire32 at the same time to the metal layer 33 n of one of adjacent lightemitting elements 1 and the metal layer 33 p of the other light emittingelement 1, the width of the metal wire 32 to be disposed can be thetotal of the width of the metal wire 32 n and the width of the metalwire 32 p. That is, in the case where the width of the supporting member3 in the longitudinal direction is about 500 μm, the width of the metalwire 32 is preferably 300 μm or less, and in the case where the width ofthe supporting member 3 in the longitudinal direction is about 2 mm, thewidth of the metal wire 32 is preferably about 1800 μm or less.

The metal layer (n-side metal layer, electrode) 33 n is internal wiringon the lower layer side provided on the n-side electrode 13, and themetal wire 32 n, which is the internal wiring on the upper layer side,is bonded on the upper surface of the metal layer 33 n. Similarly, themetal layer (p-side metal layer, electrode) 33 p is an internal wiringon the lower layer side provided on the p-side electrode 15, and themetal wire 32 p, which is the internal wiring on the upper layer side,is bonded on the upper surface of the metal layer 33 p. The metal layers33 n and 33 p function as shock absorbing layers at the time of bondingthe metal wires 32 n and 32 p by using a wire bonder, and thus are forreducing damage to the semiconductor stack 12. Accordingly, the filmthickness of the metal layers 33 n and 33 p is preferably about 3 μm ormore and 50 μm or less, and more preferably about 20 μm or more and 30μm or less. Furthermore, the metal layers 33 n and 33 p are embedded inthe resin layer 31 without being exposed, and have the function ofincreasing the height of the position H_(B) of the lower end of theexposed surfaces of the metal wires 32 n and 32 p on the side surfacesin the longitudinal direction. Additionally, the metal layers 33 n and33 p may be assumed to be parts of the pad electrodes provided as theuppermost layers of the n-side electrode 13 and the p-side electrode 15.

Additionally, in the case where the n-side electrode 13 and the p-sideelectrode 15, which are the pad electrodes of the light emitting element1, are able to absorb the impact at the time of wire-bonding, the metalwires 32 n and 33 p may be directly bonded with the n-side electrode 13and the p-side electrode 15 without the metal layers 33 n and 33 p beingprovided. Also, in the case of not providing the metal layers 33 n and33 p, the loop shape of the wires may be adjusted at the time ofdispoing the metal wires 32 n and 32 p to the n-side electrode 13 andthe p-side electrode 15 to thereby separate the position H_(B) of thelower end of the exposed surfaces of the metal wires 32 n and 32 p onthe side surfaces in the longitudinal direction from the position HE ofthe lower surface of the light emitting element 1 by a predetermineddistance or more.

As the metal layers 33 n and 33 p, Cu, Au, Al or any of alloys havingthese metals as the principal components can be suitably used. Also, themetal layers 33 n and 33 p may have a stacked structure using aplurality of types of metal. The metal layers 33 n and 33 p may beformed by an electroplating method. Also, the metal layers 33 n and 33 pmay be formed by using wire bumps that are formed at the time ofball-bonding the metal wires.

The external connection electrode (n-side external connection electrode)34 n and the external connection electrode (p-side external connectionelectrode) 34 p are pad electrodes for bonding the light emitting device100 to an external mounting substrate, and are provided in such a way asto be electrically connected to the exposed surfaces of the metal wires32 n and 32 p, which are internal wiring, from the resin layer 31.Additionally, the exposed surfaces of the metal wires 32 n and 32 p fromthe resin layer 31 may be made connection surfaces with the outside formounting, without providing the external connection electrodes 34 n and34 p.

Furthermore, to increase the bondability with the mounting substrate inwhich a bonding material of Au-based alloy such as Au—Sn eutectic solderis used, at least the uppermost layers of the external connectionelectrodes 34 n and 34 p are preferably formed of Au. For example, inthe case where the metal wires 32 n and 32 p are formed of metal otherthan Au, such as Cu or Al, to increase the adhesiveness with Au, it ispreferable to first form a thin Ni film and then to stack the Au layeron the Ni layer by an electroless plating method. Also, stacking may beperformed with a Pd layer between Ni layer and Au layer such asNi/Pd/Au. Furthermore, the total film thickness of each of the externalconnection electrodes 34 n and 34 p may be about 0.1 μm or more and 5 μmor less, or more preferably about 0.5 μm or more and 4 μm or less.

Next, referring to FIGS. 6A to 6D, side-view mounting of the lightemitting device 100 and heat dissipation by internal wiring will bedescribed. Additionally, in FIGS. 6A to 6D, for the sake of simpleexplanation, the external connection electrode 34 p (see FIG. 3A) isomitted, and the light emitting device 100 is assumed to be directlybonded with a mounting substrate 90 on the exposed surface of the metalwire 32 p from the resin layer 31. In the same manner, description isgiven with respect to light emitting devices 200, 300 and 400 accordingto reference examples assuming that the light emitting devices 200, 300and 400 are directly bonded with the mounting substrate 90 on theexposed surfaces of metal layers 234, 334 and 434, which are internalwiring on the upper layer side, from the resin layer 31. Also, FIGS. 6Ato 6D show cross-sections of the electrodes and the internal wiring onthe p-side, and since the same thing applies for the electrodes and theinternal wiring on the n-side, illustration of the n-side will beomitted.

FIG. 6A shows side-view mounting of the light emitting device 100 on themounting substrate 90. One of side surfaces in the longitudinaldirection of the light emitting device 100 is made the mounting surface,and the metal wire 32 p exposed to the mounting surface is bonded with awiring pattern 92 provided on the upper surface of a substrate 91 usinga conductive adhesive material 93 such as solder.

At this time, the adhesive material 93 may spread not only over theexposed surface of the metal wire 32 p, but also over the peripheralregion of the exposed surface due to the weight of the light emittingdevice 100 or the pressure applied by the light emitting device 100 atthe time of mounting. Then, when the adhesive material 93 reaches thephosphor layer 2, which is the light extraction surface of the lightemitting device 100, the light extraction surface may be polluted by theadhesive material 93, which may lead to reduction in the lightextraction efficiency. Accordingly, a distance D₁ between the positionH_(B) of the lower end (the lower end in the Z-axis direction; the rightend in FIGS. 6A to 6D) of the exposed surface of the metal wire 32 p,which is an external connection region, and the position HE of the upperend of the light extraction surface is made to be a predetermineddistance or more on the mounting surface at the time of side-viewmounting. Although dependent on the size of the light emitting device100 and the like, this predetermined distance may be 100 m, for example.

In this manner, from the standpoint of prevention of pollution of thelight extraction surface at the time of mounting, a greater distance D₁is more preferable. However, if the distance D₁ is increased, theproportion of the volume of the resin layer 31 is increased, and theheat dissipation property of efficiently transferring heat generated bythe light emitting element 1 to the outside may be reduced. Here, theheat dissipation property of the light emitting device 100 will bedescribed by considering a case of forming, to the light emitting device100, internal wiring on the upper layer side by using, instead of themetal wire 32 p, a metal layer (for example, a plated layer) whosetransverse cross-sectional view has a constant shape and which has acolumnar shape whose axis is along the Z-axis direction.

In a light emitting device 200 according to a reference example shown inFIG. 6B, a metal layer 234 is provided so that a position of an uppersurface of the p-side electrode 15 corresponds to a lower end (right endin FIG. 6B) of the metal layer 234, and the portion higher, and theportion higher (positive direction of the Z-axis) than the position ofthe lower end is made the exposed surface that is exposed from the resinlayer 31. In this case, the proportion of a volume V₂ of the resin layer31 in a supporting member 203 is extremely small, and the proportion ofthe metal layer 234 is great, and the light emitting device 200 mayachieve a very good heat dissipation property. However, a distance D₂between the lower end of the exposed surface of the metal layer 234 andthe upper surface of the phosphor layer 2, which is the light extractionsurface (that is, the lower surface of the light emitting element 1), issmall, and the light extraction surface may be easily polluted by theadhesive material 93 at the time of mounting.

Furthermore, in a light emitting device 300 according to a referenceexample shown in FIG. 6B, a metal layer 334 is provided so that aposition of an upper surface of the metal layer 333 provided on an uppersurface of the p-side electrode 15 corresponds to a lower end (right endin FIG. 6C) of the metal layer 334, and the portion higher (positivedirection of the Z-axis) than the position of the lower end is made theexposed surface that is exposed from the resin layer 31. The metal layer333 here is the same as the metal layer 33 p of the light emittingdevice 100, and is for increasing the height of the lower end positionof the exposed surface of the metal layer 334 at the side surface. Inthis case, the proportion of a volume V₃ of the resin layer 31 in asupporting member 303 is relatively small, and the proportion of themetal layer 334 is great, and the light emitting device 300 may achievea good heat dissipation property. However, a distance D₃ between thelower end of the exposed surface of the metal layer 334 and the uppersurface of the phosphor layer 2, which is the light extraction surface(that is, the lower surface of the light emitting element 1), isrelatively small, albeit greater than the distance D₂ at the lightemitting device 200, and is not enough to prevent pollution of the lightextraction surface by the adhesive material 93 at the time of mounting.

Furthermore, in a light emitting device 400 according to a referenceexample shown in FIG. 6D, a metal layer 434 is provided so that an uppersurface of a metal layer 433 provided on the upper surface of the p-sideelectrode 15 corresponds to a lower end (right end in FIG. 6D) of themetal layer 434, and the portion higher (positive direction of theZ-axis) than the position of the lower end is made the exposed surfacethat is exposed from the resin layer 31. The metal layer 433 here hassuch a thickness that the position of the upper surface is equal to theposition H_(C) of the lower end of the exposed surface of the metal wire32 p of the light emitting device 100 shown in FIG. 6A. In this case, adistance D₄ between the lower end of the exposed surface of the metallayer 434 and the upper surface of the phosphor layer 2, which is thelight extraction surface (that is, the lower surface of the lightemitting element 1), is sufficiently great, and thus pollution of thelight extraction surface by the adhesive material 93 at the time ofmounting may be effectively prevented. However, the proportion of avolume V₄ of the resin layer 31 in a supporting member 403 is great, andthe proportion of the metal layer 434 is small, and the heat dissipationproperty of the light emitting device 400 is greatly reduced compared tothe light emitting device 300.

The light emitting device 100 according to the embodiment of the presentinvention is structured to have a taper-shape with the side surface ofthe lower portion inclined, from the lower ends (position He) of themetal wires 32 n and 32 p to the lower ends (position H_(B)) of theexposed surfaces at the side surfaces of the resin layer 31 in thelongitudinal direction. In other words, metal members 32 n and 32 prespectively have a first surface, a second surface opposite to thefirst surface, a side surface extending from the second surface towardthe first surface, and a tapered surface tapered from the side surfaceto the first surface. The metal members 32 n and 32 p are provided inthe resin layer 31 and electrically connected to the upper surface ofthe electrodes 13 and 15 via the first surface. The side surface of themetal members 32 n and 32 p are exposed from the resin layer 31.Accordingly, the distance D₁ between the lower end (position H_(B)) ofthe exposed surface of the metal wire 32 p at the side surface of theresin layer 31 in the longitudinal direction and the upper surface(position HE) of the phosphor layer 2 is the same as the distance D₄ atthe light emitting device 400. Thus, pollution of the light extractionsurface by the adhesive material 93 at the time of mounting can beeffectively prevented. On the other hand, since the lower portion of themetal wire 32 p is taper-shaped, the volume V₃ of the resin layer 31 inthe supporting member 3 can be made smaller than the volume V₄ of theresin layer 31 at the light emitting device 400. Accordingly, the lightemitting device 100 can achieve a better heat dissipation property thanthe light emitting device 400.

Additionally, the exposed surface of the metal wire 32 p of the lightemitting device 100 at the side surface of the resin layer 31 in thelateral direction has the same cross-sectional shape as the metal wire32 p shown in FIG. 6A. Accordingly, the lower end of this exposedsurface is at the position H_(C) at the upper surface of the metal layer33 p. The exposed surface of the metal wire 32 p at the side surface inthe lateral direction is not a mounting surface, but is continuous withthe exposed surface at the side surface in the longitudinal direction,and thus, in the case where the exposed surface in the longitudinaldirection is made the mounting surface, the adhesive material 93 maypossibly extends toward the phosphor layer 2 along the side surface inthe lateral direction. In the light emitting device 100, since the lowerportion of the metal wire 32 p has a tapered shape, the position H_(B)at the lower end of the exposed surface of the metal wire 32 p at theside surface in the longitudinal direction is sufficiently separatedfrom the position H_(C) at the lower end of the exposed surface of themetal wire 32 p at the side surface in the lateral direction.Accordingly, the adhesive material 93 can be effectively prevented fromextending to the position HE of the upper surface of the phosphor layer2 along the exposed surface of the metal wire 32 p at the side surfacein the lateral direction and via the lower end of the position H_(C).

Operation of Light Emitting Device

Next, with reference to FIG. 1 to FIG. 5B, an operation of the lightemitting device 100 will be described. Additionally, for the sake ofconvenience, description is given assuming that the light emittingelement 1 emits blue light and the phosphor layer 2 emits yellow light.

According to the light emitting device 100, when an external powersource is connected to the external connection electrodes 34 n and 34 p,which are positive and negative electrodes, via a mounting substrate(for example, see the mounting substrate 90 in FIG. 6A), a current issupplied between the n-side electrode 13 and the p-side electrode 15 ofthe light emitting element 1 via the metal wires 32 n and 32 p and themetal layers 33 n and 33 p, which are internal wirings. Then, when acurrent is supplied between the n-side electrode 13 and the p-sideelectrode 15, the active layer 12 a of the light emitting element 1emits blue light.

The blue light emitted by the active layer 12 a of the light emittingelement 1 propagates within the semiconductor stack 12 and is emittedfrom the lower surface of the light emitting element 1, and a part ofthe light is absorbed by the phosphor contained in the phosphor layer 2and is extracted to the outside after being converted into yellow light.Also, a part of the blue light passes through the phosphor layer 2without being absorbed by the phosphor, and is extracted to the outside.Additionally, light propagating upward within the light emitting element1 is reflected downward by the reflective electrode 14 a, and is emittedfrom the lower surface of the light emitting element 1. Then, the yellowlight and the blue light extracted to the outside of the light emittingdevice 100 are mixed, and thus white light is obtained.

Manufacturing Method of Light Emitting Device

Next, a manufacturing method of the light emitting device 100 shown inFIG. 1 to FIG. 3B will be described with reference to FIG. 7. As shownin FIG. 7, the manufacturing method of the light emitting device 100includes a light emitting element preparation step (wafer preparationstep) S101, a metal layer forming step S102, a wire wiring step S103, aresin layer forming step S104, a surface machining step S105, ahalf-dicing step S106, an external connection electrode forming stepS107, a growth substrate removal step S108, a phosphor layer formingstep (wavelength conversion layer forming step) S109, and a singulationstep S110, and the steps are carried out in this order. Moreover, thesurface machining step S105 and the half-dicing step S106 are the stepfor exposing the internal wiring (internal wiring exposure step).

In the following, each step will be described in detail with referenceto FIG. 8A to FIG. 18B (and with reference to FIG. 1 to FIG. 5B and FIG.7 as appropriate). Additionally, detailed structure of the lightemitting element 1 (for example, the protective layer 16, the stackedstructure of the semiconductor stack 12, and the like) are omitted fromeach of FIG. 8A to FIG. 18B. Also, the shapes, the sizes, and thepositional relationship may be simplified or exaggerated as appropriatefor other members. The same thing applies to the explanatory diagrams ofthe manufacturing steps of other embodiments described later.

The light emitting element preparation step (wafer preparation step)S101 is a step of preparing the light emitting element 1 having thestructure shown in FIGS. 4A and 4B and FIGS. 5A and 5B, for example. Inthe light emitting element preparation step S101, a plurality of lightemitting elements 1 are formed in the form of a wafer by being arrangedon one growth substrate 11. In FIG. 8A to FIG. 18B, two light emittingelements 1 are formed in the longitudinal direction (X-axis direction)and four are formed in the lateral direction (Y-axis direction) in planview. Additionally, plan views and cross-sectional views on a pluralityof planes are shown in FIG. 8A to FIG. 18B, and the direction of eachfigure is indicated by the coordinate axes.

Specifically, first, the semiconductor stack 12 is formed on the uppersurface of the growth substrate 11 formed of sapphire or the like bysequentially stacking the n-type semiconductor layer 12 n, the activelayer 12 a and the p-type semiconductor layer 12 p using thesemiconductor material described above. When the semiconductor stack 12is formed, parts of the p-type semiconductor layer 12 p, the activelayer 12 a and the n-type semiconductor layer 12 n are removed byetching at partial regions of the upper surface of the semiconductorstack 12, and the step portion 12 b having the n-type semiconductorlayer 12 n exposed at the bottom surface is formed.

Also, at the same time as forming the step portion 12 b, the boundaryregion between the light emitting elements 1 may be etched to expose then-type semiconductor layer 12 n. With this process, the side surface ofthe semiconductor stack 12 including at least the active layer 12 a canbe covered by the protective layer 16 later in the light emittingelement preparation step S101. Moreover, the semiconductor stack 12 maybe entirely removed at the boundary region such that the growthsubstrate 11 is exposed. This eliminates the need of dicing thesemiconductor stack 12 in the singulation step S110, and singulation maybe easily performed by dicing only the layer formed of resin.Additionally, in the example shown in FIGS. 8A to 8D, the semiconductorstacks 12 at the boundary regions of the light emitting elements 1(peripheral regions of boundary lines 40 shown by thick dotted line ineach of FIGS. 8A to 8D) are entirely removed.

Next, the n-side electrode 13, which is a pad electrode, is formed onthe bottom surface of the step portion 12 b. Also, in the region whichis to be a light emitting region including the p-type semiconductorlayer 12 p and the active layer 12 a, the full-surface electrode 14 isformed that includes the reflective electrode 14 a for coveringsubstantially the entire upper surface of the p-type semiconductor layer12 p and the cover electrode 14 b for completely covering the uppersurface and the side surfaces of the reflective electrode 14 a. Also,the p-side electrode 15, which is a pad electrode, is formed on a partof the upper surface of the cover electrode 14 b. Furthermore, theprotective layer 16 is formed on the entire surface of the waferexcluding the surfaces of the n-side electrode 13 and the p-sideelectrode 15 by sputtering, for example, and by using an insulatingmaterial such as SiO₂. The light emitting elements 1 in the wafer stateare thus formed as shown in FIGS. 8A to 8D.

Next, in the metal layer forming step S102, the metal layer 33 n isformed on the n-side electrode 13 and the metal layer 33 p is formed onthe p-side electrode 15 for each light emitting element 1, as shown inFIGS. 9A to 9D. The metal layers 33 n and 33 p can be formed by anelectroplating method or the like, and may be shaped by a known methodin the field such as a pattern formation method by etching or a patternformation method by lift-off. Also, metal wires may be ball-bonded tothe upper surfaces of the n-side electrode 13 and the p-side electrode15 to form wire bumps, and these wire bumps may be used as the metallayers 33 n and 33 p.

Next, as shown in FIGS. 10A to 10D and FIG. 11, in the wire wiring stepS103, wiring is performed by using a wire bonder with respect to then-side electrodes 13 and the p-side electrodes 15 of the light emittingelements 1 arranged in one direction (Y-axis direction) on the growthsubstrate 11 by repeating wedge bonding using one metal wire 32 for eachline (the metal wire 32 is supplied at an angle from the movementdirection of a wedge tool, and is bonded by being flattened by the tipend of the wedge tool). That is, the metal wire 32 is disposed, withoutbeing cut, to be sequentially connected (commonly connected) to theelectrodes arranged in one line along one direction. At this time, themetal wire 32 is disposed while being bent in a wave shape, and theportions which are parts of the side surface of the wire shape of themetal wire 32 and correspond to the troughs of the wave shape are bondedwith the upper surfaces of the metal layers 33 n and 33 p by wedgebonding.

In other words, at the time of this bonding, the metal wire 32 isdisposed to have an arc shape between the n-side electrodes 13 or thep-side electrodes 15 of the light emitting elements 1 that are adjacentto each other in the wiring direction (Y-axis direction). That is,wiring is performed in such a way that the lower end (Z-axis direction)of the metal wire 32 at the boundary line 40 of the light emittingelements 1 is at the position H_(B), which is more separate from thesemiconductor stack 12 (for example, the lower surface of the lightemitting element 1 which is the light extraction surface) than theposition H_(C) of the bonding surface of the metal layer 33 n or 33 p.

At this time, the height of the arc of the metal wire 32 is adjustedsuch that the distance from the lower surface of the light emittingelement 1 to the position H_(B) is a predetermined value (for example,100 μm) or more. Additionally, the metal layer forming step S102 may beomitted, and the metal wires 32 may be directly bonded on the n-sideelectrode 13 and the p-side electrode 15 without forming the metallayers 33 n and 33 p. Also in this case, the height of the arcs of themetal wires 32 can be adjusted such that the distance from the lowersurface of the light emitting element 1 to the position H_(B) is apredetermined value (for example, 100 μm) or more.

Additionally, the one direction (Y-axis direction) along which the lightemitting elements 1 are arranged is a direction that is perpendicular tothe direction (X-axis direction) along which the metal layer 33 nconnected to the n-side electrode 13 and the metal layer 33 p connectedto the p-side electrode 15 in each light emitting element 1 face eachother. By wiring the metal wires 32 in this one direction, each metalwire 32 may be disposed independently without being disposed across themetal layer 33 n and the metal layer 33 p in one light emitting element1.

Also, in the example shown in FIGS. 10A to 10D and FIG. 11, the metalwire 32 is disposed, with respect to the light emitting elements 1 thatare arranged adjacent to each other in the direction (X-axis direction)perpendicular to the wiring direction, so as to be bonded at the sametime to the metal layer 33 n of one of the light emitting elements 1 andthe metal layer 33 p of the other light emitting element 1. That is, themetal wire 32 is disposed so as to extend, in the width direction,across the metal layer 33 n of one light emitting element 1 (forexample, the light emitting element 1 arranged on the left side in FIG.10A) and the metal layer 33 p of the other light emitting element 1 (forexample, the light emitting element 1 arranged on the right side in FIG.10A).

In this manner, by bonding the metal wire 32 to two metal layers 33 nand 33 p by performing wire bonding once, the number of times of wirebonding may be reduced. Also, using a ribbon-shaped wire having arectangular cross-section as the metal wire 32 and wiring theribbon-shaped wire in such a way that the long side of the rectangleextends across the metal layers 33 n and 33 p are preferable because themetal wire 32 may be bonded with the metal layers 33 n and 33 p withgood adhesiveness.

Additionally, the metal wires 32 that are disposed across the lightemitting elements 1 that are adjacent to each other in the wiringdirection and in the direction perpendicular to the wiring direction arecut in the half-dicing step S106 or the singulation step S110 describedbelow for each light emitting element 1. Also, in the presentembodiment, a ribbon-shaped wire having a rectangular cross-section isused as the metal wire 32 to be disposed, but this is not restrictive.For example, a metal wire having a circular cross-section with adiameter corresponding to the width (the length of the long side of thecross-section) of the ribbon-shaped metal wire 32 may be used to bedisposed. Also, wiring may be separately performed for the metal layers33 n and for the metal layers 33 p by using a metal wire having anappropriate width or diameter instead of performing wiring across themetal layers 33 n and 33 p of the light emitting elements 1 that areadjacent to each other in the direction perpendicular to the wiringdirection.

By forming internal wiring by using the metal wire 32 with a largevolume, such as a ribbon-shaped wire or a thick wire, in the abovemanner, the internal wiring can be formed with less time compared to acase of forming the internal wiring by plating method, and theproductivity of the light emitting device may be increased. Furthermore,the material of the metal wire 32 is not particularly limited, but byusing the metal wire 32 formed of metal such as Cu or Al, which arecheaper compared to Au, internal wiring with a large volume can beprovided inexpensively. As a result, the heat dissipation property ofthe light emitting device can be improved.

Also, by forming the metal wires 32 n and 32 p by bending and wiring themetal wires 32 having a large cross-sectional area, internal wiringsuitable for side-view mounting may be formed by using one metal wire 32for electrodes of each polarities. Furthermore, the internal wiringformed of this metal wire 32 may be exposed at not only the sidesurfaces of the resin layer 31, but also at the upper surface of theresin layer 31, and is thus suitable also for top-view mounting. Also,by wiring the metal wire 32 while bending in a wave shape, the volume ofmetal in the supporting member 3 (resin layer 31) after completion maybe made great. Moreover, also by wiring the metal wire 32 acrossadjacent light emitting elements 1, the volume of metal in thesupporting member 3 (resin layer 31) after completion can be made great.

Next, as shown in FIGS. 12A and 12B, in the resin layer forming stepS104, the resin layer 31 is formed by a compression molding method usinga mold, a coating method such as a spin-coating method, or the like insuch a way as to seal the light emitting elements 1, the metal layers 33n and 33 p, and the metal wires 32. At this time, the resin layer 31 isformed to have its upper surface at the position HA or higher in theZ-axis direction.

Next, in the surface machining step (internal wiring exposure step)S105, the resin layer 31 is machined from the upper surface, togetherwith the metal wire 32 inside, down to a machining line 41 by using amachining device. Here, the height of the machining line 41 is a heightcorresponding to the upper surface of the trough portion of the metalwire 32 disposed in an arc shape. By machining the metal wire 32 down tothis machining line 41, the metal wire 32 can be made to expose at theupper surface of the resin layer 31 and also the upper surface of themetal wire 32 can be made flat, as shown in FIGS. 13A and 13B. Also, atthis time, the exposed surface of the metal wire 32 at the upper surfaceof the resin layer 31 and the upper surface of the resin layer areformed to have the same plane.

Next, as shown in FIGS. 14A to 14C, in the half-dicing step (internalwiring exposure step) S106, grooves 31 a and grooves 31 b are formedfrom the upper surface side along the boundary lines 40. The metal wire32, which is internal wiring disposed across adjacent light emittingelements 1, is thereby cut at the part of the boundary line 40, and isseparated into the metal wires 32 n and 32 p. Then, the end surfaces ofthe metal wires 32 n and 32 p which have been cut are exposed atrespective side surfaces in the longitudinal direction and the lateraldirection of the resin layer 31. Also, the inner side surface of thegroove 31 a is made the upper side surface of the light emitting device100 in the longitudinal direction, and the inner side surface of thegroove 31 b is made the upper side surface in the lateral direction. Toexpose, at the side surfaces of the resin layer 31, the cut surfaces ofthe metal wire 32 in the manner described above as the side surfaces ofthe metal wires 32 n and 32 p, at least the groove 31 a is formed bydicing (half-dicing) a part of the resin layer 31 to be removed from theupper surface side of the resin layer 31 down to a predetermined depth.

Here, the groove 31 a is formed to have such a width that a platingsolution sufficiently spreads over the exposed surfaces of the metalwires 32 n and 32 p at the time of electroless plating in the externalconnection electrode forming step S107 performed later. Additionally, inthe half-dicing step S106, the groove 31 b for forming the side surfacein the lateral direction, which is not a mounting surface, may be formedby half-dicing with a different depth from that of the groove 31 a, andalso, instead of forming the groove 31 b in the half-dicing step S106,full-dicing of completely cutting in the thickness direction along theY-axis direction may be performed in the singulation step S110.

Here, as shown in FIGS. 14B and 14C, in the height direction (Z-axisdirection), the position of the upper surfaces of the resin layer 31 andthe metal wires 32 n and 32 p is at HA, the position of the lower end ofthe exposed surfaces of the metal wires 32 n and 32 p at the sidesurface in the longitudinal direction is at H_(B), the position of thebottom surface which is the lower end of the groove 31 a (and the groove31 b) formed by half-dicing is at H_(G), and the position of the lowersurface which is the lower end of the light emitting element 1 is at HE.

The lower limit (shallower limit) for a depth of the groove 31 a, thatis, the shallower limit for the position H_(G), is the position H_(B).With the position Ho being lower than the position H_(B), the metal wire32 may be completely cut and the cut surface may be exposed from theresin layer 31 at the side surface in the longitudinal direction.Furthermore, the position Ho is preferably at or lower than the positionH_(C), which is the lower end of the metal wires 32 n and 32 p. Then,the metal wires 32 n and 32 p may be completely cut and the cut surfacesmay be exposed from the resin layer 31 also at the side surface in thelateral direction.

Also, the upper limit (deeper limit) for the position Ho is preferablyat a position at which enough strength to maintain the wafer state maybe obtained after the growth substrate 11 is removed in a later step.The upper limit for the position Ho may be determined as appropriateaccording to the rigidity of the resin. Additionally, in the case ofkeeping the growth substrate 11 as it is or reducing a thickness of thegrowth substrate 11 without removing the growth substrate 11, or in thecase of attaching, after the external connection electrode forming stepS107 and before removal of the growth substrate 11, an adhesive sheet,as a supporting member for maintaining the wafer state, to the surfaceopposite the side where the growth substrate 11 is provided, the groove31 a and the groove 31 b may be formed in such a way as to remove all ofthe resin layer 31 in the thickness direction.

Next, as shown in FIGS. 15A and 15B, in the external connectionelectrode forming step S107, the external connection electrodes 34 n and34 p made of Au films are formed by the electroless plating method onthe exposed surfaces of the metal wires 32 n and 32 p at the uppersurfaces and the side surfaces in the longitudinal direction and thelateral direction. Additionally, in the case where the metal wires 32 nand 32 p are not made of Au but made of Cu or Al, Ni films arepreferably formed as lower layers before forming the Au films so as toincrease the adhesiveness. In the case of providing the externalconnection electrodes 34 n and 34 p on only the exposed surfaces of themetal wires 32 n and 32 p in the above manner, the external connectionelectrodes 34 n and 34 p may be formed with ease by the electrolessplating method. Additionally, a cross-section corresponding to line C-Cin FIG. 14A is omitted from the drawings, but an n-side wiring structureis formed in a manner similar to that of the p-side wiring structureshown in FIG. 15B.

Next, as shown in FIG. 16, in the growth substrate removal step S108,the growth substrate 11 is removed by an LLO (laser lift-off method) ora chemical lift-off method, for example. At this time, since thesemiconductor stack 12 is reinforced by the supporting member 3 havingthe resin layer 31 as the main body, it may not be susceptible todamages such as splitting or cracking. Additionally, the growthsubstrate 11 may be thinned by rear-surface polishing instead of beingremoved. Also, an adhesive sheet may be attached as a supporting memberfor maintaining the wafer state on the upper surface side beforeremoving the growth substrate 11.

Moreover, as post-processing after removal of the growth substrate 11,the lower surface of the semiconductor stack 12 which is exposed may bepolished, and the protrusion-recess shape 12 c (see FIG. 4B) may beformed by roughening the surface by a wet etching method, for example.Additionally, the growth substrate 11 which has been removed may bereused as the growth substrate 11 for allowing crystal growth of thesemiconductor stack 12 by having a surface of the growth substrate 11polished.

Next, as shown in FIG. 17, in the phosphor layer forming step(wavelength conversion layer forming step) S109, the phosphor layer 2 isformed on the lower surface side of the semiconductor stack 12. Asdescribed above, the phosphor layer 2 may be formed by spraying a slurryin which a solution contains a resin and phosphor particles, forexample. In the case where the semiconductor stack 12 at the boundaryregion of the light emitting elements 1 is entirely removed in the lightemitting element preparation step S101, the entire surface of thesemiconductor stack 12 is to be resin-sealed by the phosphor layer 2,which is a layer formed of resin, and the resin layer 31.

Lastly, in the singulation step S110, a groove 31 c having a depth thatreaches the lower surface of the groove 31 a is formed as shown in FIG.18B by dicing from the lower surface side of the phosphor layer 2 alongthe boundary line 40 (see FIG. 17). Also with respect to the groove 31 bextending in the Y-axis direction, a groove having a depth reaching thelower surface of the groove 31 b is formed as shown in FIG. 18A bydicing from the lower surface side of the phosphor layer 2. Singulationof the light emitting device 100 is performed in this manner.Additionally, in the case where the growth substrate 11 is kept withoutbeing removed, or in the case where the semiconductor stack 12 ispresent in the peripheral region of the boundary line 40, the growthsubstrate 11 and the semiconductor stack 12 are also diced.

Here, that the groove 31 c reaches the lower surface of the groove 31 ameans that the position H_(D) of the upper surface of the groove 31 c ismade the same or above the position Ho (see FIG. 14B) of the lowersurface of the groove 31 a. The grooves 31 a and 31 c are therebycommunicated with each other, and thus the light emitting device 100 isseparated.

Moreover, the width of the groove 31 c is preferably made wider than thegroove 31 a, and the groove 31 a is preferably formed being providedinside the groove 31 c in plan view. Then, even if the center line ofthe groove 31 a and the center line of the groove 31 c are shifted fromeach other, singulation can be reliably performed, and moreover, a stepis formed in such a way that the lower side surface of the lightemitting device 100, which is the inner side surface of the groove 31 c,will be on the inner side of the light emitting device 100 than theupper side surface of the light emitting device 100, which is the innerside surface of the groove 31 a. Accordingly, at the side surface in thelongitudinal direction, which is the mounting surface of the lightemitting device 100, the lower side surface will not be on the outerside than the upper side surfaces where the external connectionelectrodes 34 n and 34 p are provided. Therefore, the adhesion betweenthe external connection electrodes 34 n and 34 p and the wiring patternof a mounting substrate or the like is not impaired by the lower sidesurface at the time of mounting, and the light emitting device 100 maybe mounted with high reliability. Also, with the step being formed, aspace is created between the mounting surface of the mounting substrateand the lower side surface of the light emitting device 100, and thus anadhesive material can be prevented from spreading to the phosphor layer2 at the time of mounting. The light emitting device 100 shown in FIG. 1to FIG. 3B is completed by the steps described above.

Additionally, the width of the groove 31 c can be made narrower than thewidth of the groove 31 a, and the groove 31 c may be formed beingprovided inside the groove 31 a in plan view. A step is thereby formedin such a way that the upper side surface of the light emitting device100 is on the inner side than the lower side surface in plan view. Bystructuring the side surface which is the mounting surface of the lightemitting device 100 in this manner, spreading of the adhesive materialat the time of mounting can be prevented by the step, and thus theadhesive material can be prevented from spreading to the phosphor layer2.

That is, with respect to the side surfaces of the resin layer 31 wherethe external connection electrodes 34 n and 34 p are provided, the lowerside surfaces which are surfaces including an end portion of the side(lower surface side) where the light emitting element 1 is provided andthe upper side surfaces where the external connection electrodes 34 nand 34 p are provided are not on the same plane, and thus an adhesivematerial can be prevented from spreading to the phosphor layer 2, whichis the light extraction surface, at the time of mounting.

Modification Example of Manufacturing Method

Also, in the manufacturing method shown in FIG. 7, it is possible toperform the growth substrate removal step S108 and the phosphor layerforming step S109 after the resin layer forming step S104, and thenperform the surface machining step S105 to the external connectionelectrode forming step S107. Moreover, it is also possible to performthe growth substrate removal step S108 and the phosphor layer formingstep S109 after the surface machining step S105, and then perform thehalf-dicing step S106 and the external connection electrode forming stepS107.

Moreover, in these example modifications, after the growth substrateremoval step S108 and the phosphor layer forming step S109 areperformed, an adhesive sheet as the supporting member for maintainingthe wafer state may be attached on the side of the phosphor layer 2 andfull-dicing may be performed on the resin layer 31 and the phosphorlayer 2 along the boundary line 40 (see FIGS. 14A to 14C), and then theexternal connection electrode forming step S107 may be performed. Inthis case, the light emitting device 100 is already singulated by thefull-dicing of the resin layer 31 and the phosphor layer 2, and thus thesingulation step S110 can be omitted. Also, the step portion 31 g (seeFIG. 2B and FIGS. 3A and 3B) is not formed on the side surface of theresin layer 31.

Second Embodiment

Next, a light emitting device according to a second embodiment will bedescribed with reference to FIG. 19 and FIGS. 20A and 20B. As shown inFIG. 19 and FIGS. 20A and 20B, a light emitting device 100A according tothe second embodiment is different from the light emitting device 100according to the first embodiment shown in FIG. 1 to FIG. 3B in that asupporting member 3A is provided instead of the supporting member 3.Structures the same as those of the light emitting device 100 accordingto the first embodiment will be denoted by the same reference signs, anddescription thereof will be omitted.

In contrast to the supporting member 3 according to the first embodimentwhere the upper surfaces of the metal wires 32 n and 32 p are flat, themetal wires 32 n and 32 p of the supporting member 3A according to thesecond embodiment have the upper portions bifurcated in the lateraldirection with the bifurcated top portions exposed from the resin layer31. The bifurcated structure of the upper portions of the metal wires 32n and 32 p of the supporting member 3A are formed by setting, in thesurface machining step S105 of the manufacturing method according to thefirst embodiment, the height of the machining line 41 to be higher thanthe upper surface of the trough portion of the metal wire 32 disposed inan arc shape. In other words, they are formed by machining the metalwire 32 as well as the resin layer 31 to the height at which the ridgeportion of the metal wire 32 disposed in an arc shape is exposed. Thus,the trough portion of the metal wire 32 disposed in an arc shape iscovered by the resin layer 31. Also, the position HE of the lower end ofthe exposed surfaces of the metal wires 32 n and 32 p at the sidesurfaces in the longitudinal direction is the same as that in the firstembodiment.

Although the upper side structure of the metal wires 32 n and 32 p whichare the internal wiring on the upper layer side is different, the lightemitting device 100A according to the second embodiment allows top-viewmounting with the upper surface of the light emitting device 100A as themounting surface. Also, as in the first embodiment, the light emittingdevice 100A allows side-view mounting with one of the side surfaces inthe longitudinal direction as the mounting surface. Moreover, the resinlayer 31 according to the second embodiment is formed to be thicker thanthe resin layer 31 according to the first embodiment, and thus the sidesurfaces of the supporting member are greater. Accordingly, the lightemitting device 100A allows stable side-view mounting with this wideside surface as the mounting surface.

Additionally, the light emitting device 100A is different from the lightemitting device 100 according to the first embodiment in only the shapeof the metal wires 32 n and 32 p, which are the internal wiring, anddescription of the operation will be omitted. Also, as described above,the light emitting device 100A may be manufactured by changing theheight of the machining line 41 in the surface machining step S105according to the first embodiment, and detailed description regardingthe manufacturing method will be omitted.

Third Embodiment

Next, a light emitting device according to a third embodiment will bedescribed with reference to FIG. 21 and FIGS. 22A and 22B. As shown inFIG. 21 and FIGS. 22A and 22B, a light emitting device 100B according tothe third embodiment is different from the light emitting device 100Aaccording to the second embodiment shown in FIG. 19 and FIGS. 20A and20B in that a supporting member 3B is provided instead of the supportingmember 3A. Structures the same as those of the light emitting device100A according to the second embodiment will be denoted by the samereference signs, and description thereof will be omitted.

As described above, according to the supporting member 3A of the secondembodiment, the external connection electrodes 34 n and 34 p areprovided to cover only the exposed surfaces of the metal wires 32 n and32 p at the upper surface and the side surfaces. On the other hand,according to the supporting member 3B of the third embodiment, theexternal connection electrodes 34 n and 34 p are provided to extend overand cover not only the exposed surfaces of the metal wires 32 n and 32 pat the upper surface and the side surfaces but also the surfaces of theresin layer 31 near the exposed surfaces.

The external connection electrodes 34 n and 34 p are provided to cover,at the upper surface, the bifurcated exposed surfaces of the metal wires32 n and 32 p exposed from the resin layer 31, and to cover, for eachpolarity, the upper surface of the resin layer 31 between the bifurcatedexposed surfaces. Furthermore, the external connection electrodes 34 nand 34 p are provided to extend, at the upper surface and the sidesurfaces in the longitudinal direction of the resin layer 31, in adirection the external connection electrodes 34 n and 34 p facing eachother (X-axis direction) of the metal wires 32 n and 32 p. Stillfurther, the external connection electrodes 34 n and 34 p are providedto cover, at the side surfaces in the lateral direction, the sidesurfaces of the resin layer 31 corresponding to the trough portions ofthe arc shape of the exposed surfaces of the metal wires 32 n and 32 p.That is, the external connection electrodes 34 n and 34 p are eachprovided to cover, in a box shape, four surfaces at the corner of thesupporting member 3B.

Also, the external connection electrode 34 n includes a triangular notch34 a at a part of a side facing the external connection electrode 34 pon the upper surface. This notch 34 a is for identifying the polarity ofa n-side electrode of the light emitting device 100B. In the presentembodiment, the notch is provided to identify an n-side polarity, butinstead a notch 31 p may be provided to the external connectionelectrode 34 p to indicate a p-side polarity.

As with the light emitting device 100A, the light emitting device 100Ballows top-view mounting with the upper surface as the mounting surface,and also allows side-view mounting with one of the side surfaces in thelongitudinal direction as the mounting surface. Moreover, in the case oftop-view mounting, since the external connection electrodes 34 n and 34p are provided on the upper surface, which is the mounting surface, toextend over the upper surface of the resin layer 31, the externalconnection electrodes 34 n and 34 p are able to bond with the mountingsubstrate more strongly than in the light emitting device 100A.Furthermore, heat generated by the light emitting element 1 may beefficiently transferred to the outside via the external connectionelectrodes 34 n and 34 p provided over a wider area, and the heatdissipation property can be improved. The operation of the lightemitting device 100B is similar to that of the light emitting device 100and the like described above, and description thereof will be omitted.

The light emitting device 100B according to the third embodiment can bemanufactured by forming the external connection electrodes 34 n and 34p, in the external connection electrode forming step S107 in themanufacturing method of the light emitting device 100A according to thesecond embodiment described above, by a sputtering method using a resistpattern instead of the electroless plating method. The light emittingelement preparation step S101 to the half-dicing step S106 are carriedout in the same manner as in the second embodiment. That is, the metalwires 32 n and 32 p are exposed at the upper surface and the sidesurfaces of the resin layer 31 by performing the surface machining stepS105 and the half-dicing step S106.

Next, in the external connection electrode forming step S107, a resistpattern having openings at regions where the external connectionelectrodes 34 n and 34 p are to be provided at the upper surface and theside surfaces and masking other regions is formed, and then a metal filmis formed by the sputtering method. Then, by removing (lifting off) theresist pattern, patterning of the external connection electrodes 34 nand 34 p is performed. At this time, a metal film is formed as theexternal connection electrodes 34 n and 34 p on the exposed surfaces ofthe metal wires 32 n and 32 p and the peripheral surface therearound ofa predetermined area on the resin layer 31. Also, by further performingelectroless plating after patterning of this metal film, strong externalconnection electrodes 34 n and 34 p can be formed.

Additionally, to form a resist pattern on the inner surfaces of thegrooves 31 a and 31 b formed in the half-dicing step S106, a coatingdevice (for example, Q-jet (registered trademark) series of EngineeringSystem Co., Ltd.) can be suitably used that allows for highly accuratecoating by ejecting a high-viscosity resist material by an electrostaticejection method. The resist pattern can also be formed by using aphotolithography method.

By forming the external connection electrodes 34 n and 34 p by asputtering method using a resist pattern, which is a mask, incombination as described above, the external connection electrodes 34 nand 34 p can be formed over a wide area to extend over the side surfacesand the upper surface of the resin layer 31, in addition to the exposedsurfaces of the metal wires 32 n and 32 p, which are the internalwiring.

The growth substrate removal step S108 to the singulation step S110 aresimilar to those in the second embodiment, and description thereof willbe omitted.

Fourth Embodiment

Next, a light emitting device according to a fourth embodiment will bedescribed with reference to FIG. 23 and FIGS. 24A and 24B. As shown inFIG. 23 and FIGS. 24A and 24B, a light emitting device 100C according tothe fourth embodiment is different from the light emitting device 100Baccording to the third embodiment shown in FIG. 21 and FIGS. 22A and 22Bin that a supporting member 3C is provided instead of the supportingmember 3B. Structures the same as those of the light emitting device100B according to the third embodiment will be denoted by the samereference signs, and description thereof will be omitted.

As described above, according to the supporting member 3B of the thirdembodiment, the external connection electrodes 34 n and 34 p areprovided to extend over and cover the exposed surfaces of the metalwires 32 n and 32 p at the upper surface and the side surfaces and thesurface of the resin layer 31 near these exposed surfaces. On the otherhand, according to the supporting member 3C of the fourth embodiment,the external connection electrodes 34 n and 34 p are provided to extendover and cover the exposed surfaces of the metal wires 32 n and 32 p atthe upper surface and the surface of the resin layer 31 near theseexposed surfaces. Accordingly, the external connection electrodes 34 nand 34 p are not provided at the side surfaces in the longitudinaldirection and the lateral direction, and the metal wires 32 n and 32 premain exposed from the resin layer 31.

Accordingly, the present embodiment has a structure suitable fortop-view mounting with the upper surface as the mounting surface. Also,although the external connection electrodes 34 n and 34 p are notprovided on the side surfaces in the longitudinal direction, side-viewmounting can also be performed with the exposed surfaces of the metalwires 32 n and 32 p at the side surfaces in the longitudinal directionas bonding sections. As in the present embodiment, it is possible toprovide the external connection electrodes 34 n and 34 p at only thenecessary regions by taking the manner of mounting into account. Theoperation of the light emitting device 100C is similar to that of thelight emitting device 100 and the like described above, and descriptionthereof will be omitted.

The light emitting device 100C according to the fourth embodiment can bemanufactured by the manufacturing method of the light emitting device100B according to the third embodiment described above without thehalf-dicing step S106. That is, after causing the upper surfaces of themetal wires 32 n and 32 p to be exposed in the surface machining stepS105, the external connection electrode forming step S107 is performedto thereby form the external connection electrodes 34 n and 34 p only atthe upper surface. Also, in the fourth embodiment, the light emittingdevice 100C can be singulated by performing full-dicing on the resinlayer 31 and the phosphor layer 2 along the boundary line 40 (forexample, see FIGS. 8A to 8D) in the singulation step S110. Other stepsare the same as those of the third embodiment, and description thereofwill be omitted.

Fifth Embodiment

Next, a light emitting device according to a fifth embodiment will bedescribed with reference to FIG. 25 and FIGS. 26A and 26B. As shown inFIG. 25 and FIGS. 26A and 26B, a light emitting device 100D according tothe fifth embodiment is different from the light emitting device 100Aaccording to the second embodiment shown in FIG. 19 and FIGS. 20A and20B in that a supporting member 3D is provided instead of the supportingmember 3A. Structures the same as those of the light emitting device100A according to the second embodiment will be denoted by the samereference signs, and description thereof will be omitted.

According to the supporting member 3A of the second embodiment, theexternal connection electrodes 34 n and 34 p are provided to cover theexposed surfaces of the metal wires 32 n and 32 p at the upper surfaceand the side surfaces as described above. On the other hand, accordingto the supporting member 3D of the fifth embodiment, the entire uppersurfaces of the metal wires 32 n and 32 p are covered by the resin layer31. The external connection electrodes 34 n and 34 p are provided tocover only the exposed surfaces of the metal wires 32 n and 32 p at theside surfaces in the longitudinal direction and the lateral direction.

Accordingly, the supporting member 3D of the fifth embodiment has astructure suitable for side-view mounting with one of the side surfacesin the longitudinal direction as the mounting surface. By forming athick resin layer 31, the side surfaces may be formed to be wide, andmore stable side-view mounting is allowed with a wide side surface inthe longitudinal direction as the mounting surface. The operation of thelight emitting device 100D is similar to that of the light emittingdevice 100 and the like described above, and description thereof will beomitted.

The light emitting device 100D according to the fifth embodiment can bemanufactured by the manufacturing method of the light emitting device100A according to the second embodiment described above without thesurface machining step S105. Alternatively, it is also possible toperform surface-machining in the surface machining step S105 to adjustthe height of the resin layer 31 within a range where the upper surfacesof the metal wires 32 n and 32 p are not exposed. Also, in the externalconnection electrode forming step S107, the external connectionelectrodes 34 n and 34 p may be formed only at the exposed surfaces ofthe metal wires 32 n and 32 p that are exposed at the side surfaces ofthe resin layer 31 by the electroless plating method. Other steps arethe same as those of the second embodiment, and description thereof willbe omitted.

Sixth Embodiment

Next, a light emitting device according to a sixth embodiment will bedescribed with reference to FIG. 27 and FIGS. 28A and 28B. As shown inFIG. 27 and FIGS. 28A and 28B, a light emitting device 100E according tothe sixth embodiment is different from the light emitting device 100Daccording to the fifth embodiment shown in FIG. 25 and FIGS. 26A and 26Bin that a supporting member 3E is provided instead of the supportingmember 3D. Structures the same as those of the light emitting device100D according to the fifth embodiment will be denoted by the samereference signs, and description thereof will be omitted.

As described above, according to the supporting member 3D of the fifthembodiment, the entire upper surfaces of the metal wires 32 n and 32 pare covered by the resin layer 31, and the external connectionelectrodes 34 n and 34 p are provided to cover only the exposed surfacesof the metal wires 32 n and 32 p at the side surfaces in thelongitudinal direction and the lateral direction. On the other hand,according to the supporting member 3E of the sixth embodiment, theexternal connection electrodes 34 n and 34 p are provided to extend overthe exposed surfaces of the metal wires 32 n and 32 p at the sidesurfaces in the longitudinal direction and the lateral direction, andalso extend to the entire surface of the resin layer 31 higher thanthese exposed surfaces and the upper surface. Accordingly, the lightemitting device 100E is structured to enable top-view mounting with theupper surface as the mounting surface as well as side-view mounting withone of the side surfaces in the longitudinal direction as the mountingsurface. The operation of the light emitting device 100E is similar tothat of the light emitting device 100 and the like described above, anddescription thereof will be omitted.

The light emitting device 100E according to the sixth embodiment can bemanufactured by the manufacturing method of the light emitting device100B according to the third embodiment described above without thesurface machining step S105. Alternatively, it is also possible toperform surface-machining in the surface machining step S105 to adjustthe height of the resin layer 31 within a range where the upper surfacesof the metal wires 32 n and 32 p are not exposed. Also, in the externalconnection electrode forming step S107, the external connectionelectrodes 34 n and 34 p can be formed, by a sputtering method using aresist pattern, to extend over the exposed surfaces of the metal wires32 n and 32 p that are exposed at the side surfaces of the resin layer31, and also over the surface of the resin layer higher than theseexposed surfaces and the upper surface. Other steps are the same asthose of the third embodiment, and description thereof will be omitted.

Seventh Embodiment

Next, a light emitting device according to a seventh embodiment will bedescribed with reference to FIG. 29 and FIGS. 30A and 30B. As shown inFIG. 29 and FIGS. 30A and 30B, a light emitting device 100F according tothe seventh embodiment is different from the light emitting device 100Daccording to the fifth embodiment shown in FIG. 25 and FIGS. 26A and 26Bin that a supporting member 3F is provided instead of the supportingmember 3D. Structures the same as those of the light emitting device100D according to the fifth embodiment will be denoted by the samereference signs, and description thereof will be omitted.

As described above, according to the supporting member 3D of the fifthembodiment, the entire upper surfaces of the metal wires 32 n and 32 pare covered by the resin layer 31, and the external connectionelectrodes 34 n and 34 p are provided to cover only the exposed surfacesof the metal wires 32 n and 32 p at the side surfaces in thelongitudinal direction and the lateral direction. On the other hand,according to the supporting member 3F of the seventh embodiment, theexternal connection electrodes 34 n and 34 p are provided to cover theexposed surfaces of the metal wires 32 n and 32 p at the side surfacesin the longitudinal direction and the lateral direction, and also metalfilms 35 n and 35 p are provided on the upper surface. The metal films35 n and 35 p provided on the upper surface are not electricallyconducted with the external connection electrodes 34 n and 34 p and themetal wires 32 n and 32 p, and are electrically floating metal films.

Accordingly, the light emitting device 100F has a structure that issuitable for side-view mounting with one of the side surfaces in thelongitudinal direction as the mounting surface. Also, by forming a thickresin layer 31, the light emitting device 100F may be stably bonded tothe mounting substrate at the time of side-view mounting. Furthermore,with an adhesive material that is supplied to the external connectionelectrodes 34 n and 34 p provided on the side surfaces in thelongitudinal direction extending over the surface of the resin layer 31to the metal films 35 n and 35 p formed on the upper surface at the timeof side-view mounting, the bondability can be increased. For thisreason, the metal films 35 n and 35 p are preferably provided to extendto regions within a predetermined distance (for example, 100 μm) fromthe side surface in the longitudinal direction.

Additionally, as with the notch 34 a (for example, see FIG. 27), atriangular notch 35 a formed at one side of the metal film 35 n is foridentifying that the external connection electrode 34 n provided nearthe notch 35 a is of an n-side polarity. The operation of the lightemitting device 100F is similar to that of the light emitting device 100and the like described above, and description thereof will be omitted.

The light emitting device 100F according to the seventh embodiment canbe manufactured by changing the manufacturing method of the lightemitting device 100D according to the fifth embodiment in the followingmanner. That is, the metal films 35 n and 35 p are formed on the uppersurface by a sputtering method using a resist pattern before thehalf-dicing step S106. Then, the half-dicing step S106 is performed tocause the metal wires 32 n and 32 p to be exposed at the side surfacesof the resin layer 31, and by performing electroless plating in theexternal connection electrode forming step S107, the external connectionelectrodes 34 n and 34 p are formed on the exposed surfaces of the metalwires 32 n and 32 p. The metal films 35 n and 35 p can be made strong bythe electroless plating at this time. Other steps are the same as thoseof the fifth embodiment, and description thereof will be omitted.

Furthermore, the light emitting device 100F can be formed by the samemanufacturing method as the light emitting device 100E according to thesixth embodiment. In this case, a resist pattern is formed in theexternal connection electrode forming step S107 in such a way as to maskregions between the metal films 35 n, 35 p and the external connectionelectrodes 34 n, 34 p to thereby form electrically floating metal films35 n and 35 p.

Example Modification

The following structures are also allowed with respect to the lightemitting devices 100 to 100F according to the embodiments describedabove. The metal wires 32 n and 32 p may be directly bonded on then-side electrode 13 and the p-side electrode 15 without the metal layers33 n and 33 p being provided. Also, the exposed surfaces of the metalwires 32 n and 32 p from the resin layer 31 may be made the bondingsections for external connection without the external connectionelectrodes 34 n and 34 p being provided. Furthermore, the externalconnection electrodes 34 n and 34 p may be provided to cover all or apart of the surfaces of the metal wires 32 n and 32 p exposed from theresin layer 31, or may be provided to extend over the surface of theresin layer 31. Still further, the metal wires 32 n and 32 p may becovered by the resin layer 31 at the side surfaces in the lateraldirection, which are not to be used as the mounting surface, so as notto be exposed. Moreover, the phosphor layer 2 does not have to beprovided, and a light-transmissive resin layer may be provided insteadof the phosphor layer 2. Also, the phosphor layer 2 may be provided onthe lower surface side of the growth substrate 11 without removing thegrowth substrate 11.

Heretofore, the light emitting device according to the presentdisclosure and the manufacturing method thereof have been specificallydescribed with reference to the embodiments, but the spirit of thepresent invention is not to be limited by these descriptions, and is tobe interpreted in a broad sense based on the claims. Also, it isneedless to say that various changes, modifications and the like basedon these descriptions are also included within the spirit of the presentinvention.

According to the light emitting device of an embodiment of the presentinvention, the volume of metal inside a resin layer may be increased,and thus, the heat conductivity of a supporting member having the resinlayer as the main body is increased, and as a result, the heatdissipation property of the light emitting device may be improved. Also,according to the manufacturing method of a light emitting device of anembodiment of the present invention, a light emitting device having thestructure described above may be manufactured with high productivity bya simple process of forming internal wiring by wiring a metal wire so asto commonly connect the electrodes of semiconductor light emittingelements arranged in one direction and of performing singulation bycutting along a boundary line.

Obviously, numerous modifications and variations of the presentinvention are possible in light of the above teachings. It is thereforeto be understood that within the scope of the appended claims, theinvention may be practiced otherwise than as specifically describedherein.

What is claimed is:
 1. A manufacturing method of a light emitting device, comprising: preparing a wafer that is provided by arranging a plurality of semiconductor light emitting elements including semiconductor stacks and electrodes provided on first surfaces of the semiconductor stacks; wiring a metal wire in an arc shape between the electrodes of the plurality of semiconductor light emitting elements that are arranged in one direction on the wafer so as to connect each of the electrodes and the metal wire; providing a resin layer on a side of the first surfaces of the semiconductor stacks in such a way that the metal wire is accommodated inside the resin layer; and cutting the wafer along a boundary line to segment the plurality of semiconductor light emitting elements so as to singulate the plurality of semiconductor light emitting elements.
 2. The manufacturing method according to claim 1, wherein in the wiring of the metal, the metal wire is wired in such a way as to connect the electrodes of the plurality of semiconductor light emitting elements that are arranged adjacent to each other in a direction, in a plan view, that is orthogonal to the one direction along which the metal wire is wired.
 3. The manufacturing method according to claim 1, wherein in the cutting of the wafer, the metal wire is caused to be exposed from the resin layer by cutting the wafer along the boundary line.
 4. The manufacturing method according to claim 1, further comprising: removing, in a region along the boundary line, the resin layer together with the metal wire that is accommodated inside the resin layer to cause the metal wire to be exposed from the resin layer after the providing of the resin layer.
 5. The manufacturing method according to claim 1, wherein a shape of a transverse plane of the metal wire is a rectangle, and wherein the metal wire is wired in such a way that a long side of the rectangle is parallel to a plane that is perpendicular to a stacking direction.
 6. The manufacturing method according to claim 1, wherein the metal wire comprises a material selected from Cu, Al, and alloys having Cu and Al.
 7. The manufacturing method according to claim 6, wherein the metal wire comprises the material selected from Cu, Al, and alloys having Cu and Al as principal components.
 8. The manufacturing method according to claim 1, further comprising: providing a metal layer whose film thickness is 3 μm or more and 50 μm or less within the resin layer as an uppermost layer of the electrodes.
 9. The manufacturing method according to claim 8, wherein the metal wire and the electrodes are electrically connected by the metal wire being connected to an upper surface of the metal layer via the metal wire.
 10. The manufacturing method according to claim 1, wherein an end surface of the metal wire that is exposed from the resin layer is covered by an external connection electrode.
 11. The manufacturing method according to claim 1, further comprising: providing a wavelength conversion layer on a side of another surface of the semiconductor stacks.
 12. The manufacturing method according to claim 11, wherein the wavelength conversion layer converts light of a wavelength emitted by the semiconductor light emitting elements into light of a different wavelength. 